Spatially confined electronic materials for resistive switching devices

用于电阻开关器件的空间受限电子材料

• 批准号: RGPIN-2019-06028
• 负责人: Jung, Jan
• 金额: $ 2.04万
• 依托单位: University of Alberta
• 依托单位国家: 加拿大
• 项目类别: Discovery Grants Program - Individual
• 财政年份: 2020
• 资助国家: 加拿大
• 起止时间: 2020-01-01 至 2021-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=715908
• 关键词: Spatially; confined; electronic; materials; resistive

My previous and current research has been focused on synthesis of thin films and micro-bridges of magnetic oxides (manganites) and studies of their electronic/material properties. These studies led to discovery of unusual material properties (such as, anisotropic magnetoresistance AMR) in these materials. Large AMR can be used in magnetic switching devices. I want AMR to reach colossal size in micro-bridges. My plans to increase the size of AMR include modification of nano-bridges of manganite films using an electron beam, as well as subjecting these bridges to stress (in piezoelectric devices). These procedures could change properties (electronic phase separation) in bridges of these materials. I am planning to use my experience with manganite materials and techniques to investigate the mechanisms responsible for unusual transport properties (resistive switching (RS)) in dielectric oxide films. Typically, the change in resistance in the dielectrics is "non-volatile" i.e., the resulting resistance can be maintained for a long time after the removal of the applied electric field. It was suggested that electric field-induced RS could be used for the next-generation random-access memory devices. I am planning first to investigate prototypical multilayer dielectric systems. There are many “parallels” between these oxides and manganites. Migration of defects and its formation are very sensitive to the shear stress in both materials. Also, the electrical transport in the dielectric oxides appears to be caused by the filamentary percolation conductivity, which is like that observed in manganites. I want to understand formation of these filaments as well as their influence on RS in dielectric oxides. I want to understand filaments in these dielectrics, the activation energy of its formation, and its structural nature. I want to answer important question; Are these filaments formed by extended defects or electro-migration of oxygen defects? My research plan is to investigate changes in the electric/structural material properties of the different types of dielectric oxide multilayer systems using piezoelectric (PMNT-based stress producing) devices, and ionic-liquid based devices capable of producing large electric field. Using this techniques, I want to separate effects due to the extended defects from those due to the electro-migration of oxygen defects in the formation of filamentary RS. The number of extended defects depends strongly on the shear stress. On the other hand, the electro-migration of defects depends strongly on the electric field. Therefore, the applied stress and electric field could help me to “tune” the dielectric system devices to conditions capable of producing large RS. The goal of this research could allow me to produce new type of devices for RS switching purposes, as well as to understand in more detail the mechanism of RS.

我以前和现在的研究主要集中在磁性氧化物（锰氧化物）薄膜和微桥的合成及其电子/材料特性的研究。这些研究导致在这些材料中发现不寻常的材料特性（例如，各向异性磁阻AMR）。大AMR可用于磁性开关器件。我希望AMR在微型桥梁中达到巨大的尺寸。我计划增加AMR的尺寸，包括使用电子束修改锰氧化物薄膜的纳米桥，以及使这些桥承受应力（在压电器件中）。这些过程可以改变这些材料的桥的性质（电子相分离）。 我计划利用我的经验与锰氧化物材料和技术，调查机制负责不寻常的传输特性（电阻开关（RS））在介电氧化膜。典型地，电阻器中的电阻变化是“非易失性的”，即，在去除所施加的电场之后，所得到的电阻可以保持很长时间。研究表明，电场诱导的RS可用于下一代随机存储器件。我计划首先研究典型的多层介质系统。这些氧化物和锰氧化物之间有许多“相似之处”。在这两种材料中，缺陷的迁移及其形成对剪切应力非常敏感。此外，电介质氧化物中的电输运似乎是由导电渗流电导率引起的，这与在锰氧化物中观察到的相似。我想了解这些细丝的形成以及它们对电介质氧化物中RS的影响。 我想了解这些纤维中的纤维，它形成的活化能，以及它的结构性质。我想回答一个重要的问题：这些细丝是由扩展缺陷形成的，还是由氧缺陷的电迁移形成的？我的研究计划是研究不同类型的电介质氧化物多层系统的电/结构材料性能的变化，使用压电（基于PMNT的应力产生）设备，以及基于离子液体的设备能够产生大电场。使用这种技术，我想分开的影响，由于扩展的缺陷，由于在形成导电RS的氧缺陷的电迁移。扩展缺陷的数量强烈地依赖于剪切应力。另一方面，缺陷的电迁移强烈地依赖于电场。因此，施加的应力和电场可以帮助我将电介质系统设备“调谐”到能够产生大RS的条件。 这项研究的目标可以让我生产新型的设备用于RS交换的目的，以及更详细地了解RS的机制。