Development of device structures with simultaneous optical and electronic confinement and microscopic transmission measurements on their lasing, absorption, and gain characteristics

开发同时进行光学和电子限制以及对其激光、吸收和增益特性进行微观传输测量的器件结构

基本信息

  • 批准号:
    10450113
  • 负责人:
  • 金额:
    $ 6.46万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
  • 财政年份:
    1998
  • 资助国家:
    日本
  • 起止时间:
    1998 至 2001
  • 项目状态:
    已结题

项目摘要

We develop novel device structures with simultaneous optical and electronic confinement such as quantum wire lasers, and study their lasing, absorption, and gain characteristics on the basis of our microscopic optical transmission measurement systems.We first developed computation codes with the finite element methods for design and optimization of quantum-confined structures for electrons and photons. We also developed measurement systems for optically pumped lasing at various temperatures, top-view photoluminescence spectra and images, and transmission light from waveguides.As for the cleaved-edge overgrown T-shaped quantum wire laser structures, we investigated the problem of interface roughness on (110) overgrowth surfaces, which limit the final quality of the structures, and resolved the problem by introducing a new growth interruption annealing method. We finally realized atomically flat interface without monolayer steps over several tens of micro-meters in lateral extent.A single quantum wire laser, which is a combination of a single-mode 1-D quantum wire and a single-mode 1-D optical waveguide was fabricated. We observed its lasing for the first time in August 2001. The laser structure includes 2-D quantum wells and 3-D double-hetero-structures in the 1-D optical waveguide and a 2-D quantum well in a 2-D slab optical waveguide. In other words, it contains structures of 1D-electron-1D-photon together with 2D-electron- 1D-photon, 3D-electron-1D-photon, and 2D-electron- 2D-phbton. Furthermore, these structures all make lasing, so that we can compare lasing characteristics of all the structure simultaneously. In addition, we resolved absorption spectra of 1-D excitons and 1-D continuum states, and observed the Sommerfeld factor inherent to 1-D systems for the first time.
在我们的微观光学传输测量系统的基础上,我们开发了新型的光和电同时受限的器件结构,如量子线激光器,并研究了它们的激光、吸收和增益特性。我们首次用有限元方法开发了计算程序,用于设计和优化电子和光子的量子受限结构。我们还开发了不同温度下的光泵浦激光、顶视光致发光光谱和图像以及来自波导的透射光的测量系统。对于解理边缘覆盖的T型量子线激光器结构,我们研究了限制结构最终质量的(110)表面界面粗糙问题,并引入了一种新的生长中断退火方法来解决这一问题。最终在几十微米范围内实现了无单层台阶的原子平坦界面,制作了单模一维量子线和单模一维光波导相结合的单量子线激光器。我们在2001年8月第一次观察到了它的激光。该激光器结构包括一维光波导中的二维量子阱和三维双异质结,以及二维平板光波导中的二维量子井。换言之,它包含一维电子一维光子和二维电子一维光子、三维电子一维光子和二维电子二维光子的结构。此外,这些结构都进行了激光,这样我们就可以同时比较所有结构的激光特性。此外,我们还解析了一维激子和一维连续态的吸收光谱,并首次观测到了一维系统固有的索末菲因子。

项目成果

期刊论文数量(162)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
T. Unuma: "Effects of interface roughness and phonon scattering on intersubband absorption line width in a GaAs quantum well"Appl. Phys. Lett.. 78(22). 3448-3450 (2001)
T. Unuma:“界面粗糙度和声子散射对 GaAs 量子阱中子带间吸收线宽度的影响”Appl。
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    0
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H.Sakaki: "10nm-scale edge-and step-quantum wires and related structures Progress in their desgn, epitaxial, and physics"Physica E. 4. 56-64 (1999)
H.Sakaki:“10nm 级边缘和阶梯量子线及相关结构的设计、外延和物理进展”Physica E. 4. 56-64 (1999)
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    0
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K.B.Nordstrom: "Excitonic dynamical Franz-Keldysh effect"Phys. Rev. Lett.. 81. 457-460 (1998)
K.B.Nordstrom:“激子动力学弗朗茨-凯尔迪什效应”物理。
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    0
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M. Baba: "Aberrations and allowances for errors in a hemisphere solid immersion lens for submicron resolution photoluminescence microscopy"J Appl. Phys.. 85. 6923-6925 (1999)
M. Baba:“用于亚微米分辨率光致发光显微镜的半球固体浸没透镜的像差和误差容许量”J Appl。
  • DOI:
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  • 影响因子:
    0
  • 作者:
  • 通讯作者:
H. Sakaki: "10nm-scale edge and step-quantum wires and related structures: Progress in their design epitaxial synthesis and physics"Physica E. 4. 56-64 (1999)
H. Sakaki:“10nm 级边缘和阶梯量子线及相关结构:其设计外延合成和物理学的进展”Physica E. 4. 56-64 (1999)
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WATANABE Shuntaro其他文献

WATANABE Shuntaro的其他文献

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{{ truncateString('WATANABE Shuntaro', 18)}}的其他基金

Generation ofintense harmonics in the water window bytwo-color field and its applications
双色场产生水窗强谐波及其应用
  • 批准号:
    17206009
  • 财政年份:
    2005
  • 资助金额:
    $ 6.46万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
Development of coherent VUV Light Source for F_2 Laser Lithography
F_2激光光刻相干VUV光源的研制
  • 批准号:
    13555010
  • 财政年份:
    2001
  • 资助金额:
    $ 6.46万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)

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Quantum-dot semiconductor waveguide gain materials and their applications
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    355624-2008
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    2010
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    Discovery Grants Program - Individual
Quantum-dot semiconductor waveguide gain materials and their applications
量子点半导体波导增益材料及其应用
  • 批准号:
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量子点半导体波导增益材料及其应用
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SOI波导单模半导体薄膜激光器研究
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Research on Monolithic Integrations of Waveguide Optical Isolators with Semiconductor Laser Diodes
波导光隔离器与半导体激光二极管单片集成研究
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  • 财政年份:
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Compact High Brightness Semiconductor Lasers Using Waveguide Grating Mirror
使用波导光栅镜的紧凑型高亮度半导体激光器
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A Novel Semiconductor Hollow-Fiber Waveguide for IR Light Delivery
用于红外光传输的新型半导体中空光纤波导
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  • 财政年份:
    1994
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Development of waveguide-type functional optical devices using semimagnetic semiconductor superlattices
利用半磁性半导体超晶格开发波导型功能光学器件
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