New Metallization Precursors for Microelectronic applications

用于微电子应用的新型金属化前驱体

• 批准号: RGPIN-2019-06213
• 负责人: Barry, Sean
• 金额: $ 3.5万
• 依托单位: Carleton University
• 依托单位国家: 加拿大
• 项目类别: Discovery Grants Program - Individual
• 财政年份: 2020
• 资助国家: 加拿大
• 起止时间: 2020-01-01 至 2021-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=715972
• 关键词: New; Metallization; Precursors; Microelectronic; applications

Micro- and nano-fabrication, the cornerstone of microelectronics, photovoltaics, and display technology relies greatly on the deposition of thin films using chemical vapour deposition (CVD) and atomic layer deposition (ALD). Metal thin films are particularly important as the wiring (i.e., metal interconnects) used in microelectronics, but also as electrical contacts and for optoelectronics. As microelectronics becomes further miniaturised, ALD has become increasingly important: it can handle the length scales (10 nm) of modern electronics much better than other fabrication techniques including CVD. Deposition processes by ALD rely heavily on the chemistry of volatile, metal-containing “precursor” compounds to deliver the components of the target film in the vapour phase. Novel chemical precursors are continually required to match the volatility and thermal stability required by ALD. Copper has been the interconnect metal of choice in microelectronics since 1997, but as the cross-section of this wiring has shrunk to accommodate smaller, more densely packed transistors and other devices, copper has started to fail. Copper metal will easily electromigrated in a current flux at small interconnect dimensions, causing poor conductivity and ultimately poor reliability. The proposed research will explore a framework in which to accurately and reproducibly measure these two key thermal parameters (volatilization and thermal decomposition) and proposes to use these to define the “thermal range” of a precursor: the temperature range over which the precursor has a high enough vapour pressure to be useful in ALD processes without thermally decomposing either in the delivery of the vapour precursor or at the gas-surface interface. Three medium-term projects are proposed: the development of precursors for gold and silver thin films for use in photonic applications like sensing and spectroscopy; the development of nickel and cobalt precursors as near-term replacements for copper as an interconnect material; and the development of precursors for tungsten and molybdenum, as high-temperature, high cohesion metals for future interconnect technology. These precursors will be designed with monoanionic, chelating ligands (amidinates, guanidinates, iminopyrrolidinates, diketiminates), monoanionic, monodentate ligands (amides, alkyls) and coordinative ligands (phosphines, carbenes). The designs will be compared using their effective “thermal range” and compared to investigate the effectiveness of each ligand in the design. Standard definitions of the temperatures for the “onset of volatility” and “thermal decomposition” will be used to compare them. Iterative precursor design will be used to develop and improve candidate precursors, and the most promising candidates will be used to develop ALD processes.

微电子、光电子和显示技术的基石--微米和纳米制造在很大程度上依赖于使用化学气相沉积（CVD）和原子层沉积（ALD）的薄膜沉积。金属薄膜作为布线（即，金属互连）用于微电子学，但也用作电接触和用于光电子学。 随着微电子技术的进一步发展，ALD变得越来越重要：它可以比包括CVD在内的其他制造技术更好地处理现代电子产品的长度尺度（10 nm）。通过ALD的沉积工艺在很大程度上依赖于挥发性的、含金属的“前体”化合物的化学性质，以在气相中递送目标膜的组分。不断需要新的化学前体来匹配ALD所需的挥发性和热稳定性。 自1997年以来，铜一直是微电子领域首选的互连金属，但随着这种布线的横截面缩小，以适应更小、更密集的晶体管和其他器件，铜开始失效。在小的互连尺寸下，铜金属将容易在电流通量中电迁移，导致差的导电性和最终差的可靠性。 拟议的研究将探索一个框架，在其中准确和可重复地测量这两个关键的热参数（挥发和热分解），并建议使用这些来界定前体的“热范围”：在该温度范围内，前体具有足够高的蒸气压，以用于ALD工艺，而不会在蒸气前体的输送中或在气体中热分解。表面界面 提出了三个中期项目：开发用于传感和光谱学等光子应用的金和银薄膜的前体;开发镍和钴前体，作为铜作为互连材料的近期替代品;开发钨和钼前体，作为未来互连技术的高温、高内聚金属。 这些前体将被设计为具有单阴离子螯合配体（脒基、胍基、亚氨基吡咯烷基、二酮亚胺基）、单阴离子单齿配体（酰胺、烷基）和配位配体（膦、卡宾）。设计将使用其有效的“热范围”进行比较，并进行比较以研究设计中每个配体的有效性。将使用“开始挥发”和“热分解”温度的标准定义来进行比较。迭代前体设计将用于开发和改进候选前体，最有前途的候选前体将用于开发ALD工艺。