Investigation of Nanoengineered III-V Buffer Layers for Hetero-integration on Silicon

用于硅异质集成的纳米工程 III-V 族缓冲层的研究

• 批准号: 552127-2020
• 负责人: Ruda, HarryHE
• 金额: $ 11.36万
• 依托单位: University of Toronto
• 依托单位国家: 加拿大
• 项目类别: Alliance Grants
• 财政年份: 2022
• 资助国家: 加拿大
• 起止时间: 2022-01-01 至 2023-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=758233
• 关键词: Investigation; Nanoengineered; III; Buffer; Layers

One of the most technically challenging and expensive aspects of silicon photonics for applications such as transceiver modules is the incorporation of a laser source. Difficulties include poor coupling of light from the laser chip to the silicon photonics chip, heat extraction from and temperature sensitivity of the laser device, cost of substrates used for the laser device, feedback sensitivity of the laser requiring incorporation of bulky optical isolators and lenses, and expensive packaging and specialized fabrication steps. All of these issues translate to a decreased yield, increased cost, and longer production time.Researchers at the University of Toronto, led by Prof. Harry Ruda, have pioneered and begun to demonstrate a technique by which single-crystal InGaAs with low defect density can be directly grown on a (100) silicon substrate. Here, in collaboration with Huawei Technologies, we propose to develop and optimize an approach based on leveraging nano-templating method to provide integration of the active III-V optical devices with Si passive optics as well as Si microelectronics. A successful development of the proposed technology will facilitate (i) realization of defect-free III-V regions required for high-performance opto-electronics applications (ii) close coupling between Silicon and III-V layers necessary for optical devices such as lasers with the III-V region as the active medium coupled to waveguides in Silicon. Further, dislocation-free hybrid growth envisaged here uses industry standard Si (100) as opposed to non-standard 6 degree miscut Si substrates, and dramatically enhances the ease of their incorporation into existing technology.

用于收发器模块等应用的硅光子学的最具技术挑战性和最昂贵的方面之一是激光源的结合。困难包括从激光器芯片到硅光子芯片的光的差耦合、来自激光器装置的热提取和激光器装置的温度敏感性、用于激光器装置的衬底的成本、需要并入庞大的光学隔离器和透镜的激光器的反馈敏感性、以及昂贵的封装和专门的制造步骤。多伦多大学的Harry Ruda教授领导的研究人员开创并开始展示一种技术，通过该技术可以在（100）硅衬底上直接生长具有低缺陷密度的单晶InGaAs。在这里，我们与华为技术公司合作，提出开发和优化一种基于利用纳米模板方法的方法，以提供有源III-V族光学器件与Si无源光学器件以及Si微电子器件的集成。 所提出的技术的成功开发将促进（i）实现高性能光电子应用所需的无缺陷III-V区（ii）光学器件（例如激光器）所需的硅和III-V层之间的紧密耦合，其中III-V区作为耦合到硅中的波导的有源介质。此外，这里设想的无位错混合生长使用工业标准Si（100），而不是非标准的6度斜切Si衬底，并且显著提高了将它们结合到现有技术中的容易性。