On-chip colloidal quantum dot devices for near-infrared optoelectronics

点击翻译按钮获取中文摘要

Colloidal quantum dots (CQDs) are solution-processed semiconductors that their energy levels can be altered by changing CQD sizes. CQD doped materials and strongly coupled CQD films are reported for various optoelectronic devices, including light-emitting diodes (LEDs), lasers, photodetectors and solar cells. While CQD optoelectronics have a bright future, high-performance CQD optoelectronic devices requires CQD films with superior electronic properties (e.g. electron mobility) in the devices and an optimized device architecture for each application. Thus, the research problems of developing CQD devices for optoelectronics are complex and challenging, requiring a great deal of innovation and originality to improve CQD films and engineer CQD-integrated devices. Near-infrared (NIR) light generation and detection have many applications, such as optical communications, medical imaging, night vision cameras, hyperspectral sensing, LiDAR for self-driving cars. There is also a demand to monolithically integrate photonic devices onto CMOS electronic circuits (Si chips). To tackle these important applications, the main research objectives are to 1) develop high electron/hole mobility CQD films and CQD inks that can produce such films on Si chips; 2) demonstrate fast NIR photodetectors and NIR image sensors by integrating CQDs onto Si chips; 3) achieve optically pumped NIR continuous-wave CQD lasers using blue LEDs. The proposed program covers research and training students on CQD synthesis and film processing, device modeling, fabrication and characterization of CQD photodetectors and lasers, and integration of CQDs on Si chips. It will enable CQDs as future materials for light sources and photodeteoctors in integrated silicon photonic circuits. The proposed research program targets knowledge advance in the field of optoelectronics and micro-/nanofabrication. The novelty and expected significance to the research field include: it would address the major challenge of developing CQD films with superior electronic properties; it would provide new CQD device architectures using CQD-on-chip technologies; finally, it would enable high-performance CQD devices for NIR optoelectronics. Over the past decade, Canadian photonics industry has benefited from strong global growth in optoelectronics market for the country's leading role in photonics R&D. Now, growing demand for infrared image sensors and lasers is predicted by increased needs in the security application and optical systems for data centers, as well as new markets from hyperspectral imaging for agriculture, mining and self-driving cars. The proposed works will help Canada to assure its leadership in photonic R&D on low-cost and high-performance NIR optoelectronic devices.