Extending the performance of SiC and GaN power devices through predictive switching

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The new era of electronic devices based on Wide Band Gap materials (SiC and GaN), as found in white LEDs, promises significant improvements in electrical power equipment such as power supplies and EV chargers. They will also transform the performance of equipment such as grid connected batteries, by balancing the charging of each cell in an efficient manner such that very large grid support batteries can be built. The expected gains over Si power semiconductor devices are very large. However, at present these gains have not been achieved, with improvements of only around a factor of 2-10 seen. Notably this is associated with a highly efficient conduction mode seen in compelling applications such as the Tesla model 3 (SiC). However, to unlock new applications requires a large shift in the switching frequency and speed of switching and the effects of this also need to be mitigated regarding the EMI produced. This project seeks to address these concerns by use of very fast calculations of the operating requirements such that the switching can be optimised for each switching moment, giving low losses and low EMI leading to compact, reliable and efficient equipment.