Extending the performance of SiC and GaN power devices through predictive switching

通过预测开关扩展 SiC 和 GaN 功率器件的性能

• 批准号: RGPIN-2020-06943
• 负责人: Palmer, Patrick
• 金额: $ 2.04万
• 依托单位: Simon Fraser University
• 依托单位国家: 加拿大
• 项目类别: Discovery Grants Program - Individual
• 财政年份: 2021
• 资助国家: 加拿大
• 起止时间: 2021-01-01 至 2022-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=741507
• 关键词: Extending; performance; SiC; GaN; power

The new era of electronic devices based on Wide Band Gap materials (SiC and GaN), as found in white LEDs, promises significant improvements in electrical power equipment such as power supplies and EV chargers. They will also transform the performance of equipment such as grid connected batteries, by balancing the charging of each cell in an efficient manner such that very large grid support batteries can be built. The expected gains over Si power semiconductor devices are very large. However, at present these gains have not been achieved, with improvements of only around a factor of 2-10 seen. Notably this is associated with a highly efficient conduction mode seen in compelling applications such as the Tesla model 3 (SiC). However, to unlock new applications requires a large shift in the switching frequency and speed of switching and the effects of this also need to be mitigated regarding the EMI produced. This project seeks to address these concerns by use of very fast calculations of the operating requirements such that the switching can be optimised for each switching moment, giving low losses and low EMI leading to compact, reliable and efficient equipment.

基于宽带隙材料（SiC和GaN）的电子设备的新时代，如在白光led中发现的那样，有望在电力设备（如电源和电动汽车充电器）方面取得重大进展。它们还将改变设备的性能，如电网连接电池，通过有效地平衡每个电池的充电，这样就可以建造非常大的电网支持电池。与硅功率半导体器件相比，预期的增益非常大。但是，目前还没有取得这些进展，只看到大约2-10倍的改进。值得注意的是，这与在特斯拉model 3 （SiC）等引人注目的应用中看到的高效传导模式有关。然而，为了解锁新的应用，需要在开关频率和开关速度上有很大的变化，并且对于产生的电磁干扰也需要减轻这种影响。该项目旨在通过使用非常快速的操作要求计算来解决这些问题，以便开关可以在每个开关时刻进行优化，从而提供低损耗和低EMI，从而实现紧凑，可靠和高效的设备。