Identification of defects degrading SiC device performance by the excess carrier lifetime mapping with micrometer resolution

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We have developed an excess carrier lifetime mapping system with micrometer resolution for identification of defects degrading device performance in silicon carbide. As a result, although we have obtained excess carrier lifetime maps for silicon samples, further improvement of the system has been required to obtain excess carrier lifetime maps for silicon carbide. On the other hand, by characterizing excess carrier lifetime in p-type silicon carbide with various defects concentration, we have found that carbon-related defects have impact on the excess carrier lifetime in p-type silicon carbide.