Creating and understanding magnetotransport properties in manganite based devices

创建和理解基于亚锰酸盐的设备中的磁输运特性

• 批准号: RGPIN-2018-05685
• 负责人: Chow, Kim
• 金额: $ 4.08万
• 依托单位: University of Alberta
• 依托单位国家: 加拿大
• 项目类别: Discovery Grants Program - Individual
• 财政年份: 2022
• 资助国家: 加拿大
• 起止时间: 2022-01-01 至 2023-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=762429
• 关键词: Creating; understanding; magnetotransport; properties; manganite

An important class of devices, including those used in magnetic sensing and recording applications, function because their resistances change significantly with the strength and direction of the magnetic field. My proposed research is aimed at understanding and manipulating these properties in a unique set of metamaterials based on manganese oxide (manganite) thin films. In these systems, we plan to control the shape, size and proximity of the small magnetic inhomogeneities that naturally exist within them. Such manipulation will enable us to produce record breaking values and/or never-seen-before electrical properties that are important for techonology. Methods for producing such novel behaviour include adjusting the strain acting on the device and using electron beams to write nanometer scale patterns into the magnetic inhomogeneities. The electrical properties include the anisotropic magnetoresistance (AMR), i.e. the change in the resistance that depends on the orientation of the magnetic field, and the tunneling magnetoresistance (TMR), a phenomenon that is commonly associated with a quantum mechanical property where electrons can apparently slip through a “barrier” which would normally impede its motion. Hence, the general goals of our investigations are twofold: (i) improve the understanding of the interesting scientific issues behind these interesting devices, and (ii) enable researchers to potentially utilize their highly sensitive tunability for new applications.

一类重要的器件，包括那些用于磁传感和记录应用的器件，其功能是因为它们的电阻随着磁场的强度和方向而显著变化。我提出的研究旨在理解和操纵这些属性在一套独特的超材料的基础上锰氧化物（锰氧化物）薄膜。在这些系统中，我们计划控制自然存在于其中的小磁不均匀性的形状，大小和接近程度。这样的操作将使我们能够产生破纪录的值和/或从未见过的电性能，这对技术很重要。 产生这种新特性的方法包括调整作用在器件上的应变，以及使用电子束将纳米尺度的图案写入磁不均匀性中。电特性包括各向异性磁阻（AMR），即电阻的变化取决于磁场的方向，以及隧穿磁阻（TMR），这是一种通常与量子力学特性相关的现象，其中电子可以明显地滑过通常会阻碍其运动的“势垒”。因此，我们研究的总体目标是双重的：（i）提高对这些有趣设备背后有趣的科学问题的理解，以及（ii）使研究人员能够潜在地利用其高度敏感的可调谐性用于新的应用。