Creating and understanding magnetotransport properties in manganite based devices

创建和理解基于亚锰酸盐的设备中的磁输运特性

• 批准号: RGPIN-2018-05685
• 负责人: Chow, Kim
• 金额: $ 4.08万
• 依托单位: University of Alberta
• 依托单位国家: 加拿大
• 项目类别: Discovery Grants Program - Individual
• 财政年份: 2022
• 资助国家: 加拿大
• 起止时间: 2022-01-01 至 2023-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=762429
• 关键词: Creating; understanding; magnetotransport; properties; manganite

An important class of devices, including those used in magnetic sensing and recording applications, function because their resistances change significantly with the strength and direction of the magnetic field. My proposed research is aimed at understanding and manipulating these properties in a unique set of metamaterials based on manganese oxide (manganite) thin films. In these systems, we plan to control the shape, size and proximity of the small magnetic inhomogeneities that naturally exist within them. Such manipulation will enable us to produce record breaking values and/or never-seen-before electrical properties that are important for techonology. Methods for producing such novel behaviour include adjusting the strain acting on the device and using electron beams to write nanometer scale patterns into the magnetic inhomogeneities. The electrical properties include the anisotropic magnetoresistance (AMR), i.e. the change in the resistance that depends on the orientation of the magnetic field, and the tunneling magnetoresistance (TMR), a phenomenon that is commonly associated with a quantum mechanical property where electrons can apparently slip through a “barrier” which would normally impede its motion. Hence, the general goals of our investigations are twofold: (i) improve the understanding of the interesting scientific issues behind these interesting devices, and (ii) enable researchers to potentially utilize their highly sensitive tunability for new applications.

一类重要的设备，包括用于磁性灵敏度和记录应用的设备，因为它们的电阻随磁场的强度和方向而显着变化。我提出的研究旨在理解和操纵这些特性，以一组基于锰氧化物（锰）薄膜的独特的超材料。在这些系统中，我们计划控制它们内部自然存在的小磁不均匀性的形状，大小和接近性。这样的操作将使我们能够产生创纪录的破损价值和/或从未看到的电气特性对技术很重要。产生这种新型行为的方法包括调整作用在设备上的应变，并使用电子束将纳米尺度模式写入磁性不均匀性。电特性包括各向异性磁路线（AMR），即取决于磁场方向的电阻变化以及隧穿磁磁力（TMR）（TMR），这种现象通常与量子机械性能相关的现象，即电子设备可以通过“障碍物显然可以通过“障碍”滑落的量子机械性能，从而可以构成运动的运动。因此，我们调查的一般目标是双重的：（i）提高对这些有趣设备背后有趣的科学问题的理解，以及（ii）使研究人员有可能利用其高度敏感的隧道性来用于新应用。