高亮度InGaN基蓝光LED已经被广泛地应用于照明和显示等领域。然而，由于In的易挥发性以及InN和GaN之间的低互溶度等原因，高效InGaN基红光LED的制备一直是该领域丞待解决的难题。本项目拟在传统InGaN基蓝光LED结构的基础上，通过能带工程/应力调控，即通过导入准超晶格InGaN/GaN下置层作为有源区应力释放层、AlGaN插入层作为阱/垒界面的应力补偿层、低温p-GaN缓冲层作为空穴注入层（兼具调整能带图形）来制备InGaN基红光LED。通过多种光谱测量（光致发光、电致发光、时间分辨等）和结构质量表征（AFM、XRD、Raman、TEM等），来调查结构参数和生长工艺对缺陷密度、应力、辐射波长（In并入率）和发光效率等的影响规律，从而阐明载流子的注入（产生）、传输、复合发光过程的内部物理机制，并最终探索出制备高效InGaN基红光LED的最佳结构参数和生长工艺。

High brightness InGaN-based blue LED has been widely used in optoelectronic devices, such as solid-state lighting and display. However, the fabrication of the high-efficiency InGaN-based red LED has been a problem that needs to be solved in this research field, due to the high volatility of In over InN and the poor miscibility between GaN and InN. The project will fabricate InGaN-based red LED by introducing InGaN/GaN quasi-superlattice underlying buffer layer as strain release layer, AlGaN interlayer with high aluminum content as strain High brightness InGaN-based blue LED has been widely used in optoelectronic devices, such as solid-state lighting and display. However, the fabrication of the high-efficiency InGaN-based red LED has been a problem that needs to be solved in this research field, due to the high volatility of In over InN and the poor miscibility between GaN and InN. The project will fabricate InGaN-based red LED on the base of conventional InGaN-based blue LED structure by using band engineering/strain control, that is, through introducing InGaN/GaN quasi-superlattice underlying buffer layer as strain release layer, AlGaN interlayer with high aluminum content as strain compensation layer and low temperature (LT) p-GaN buffer layer as hole injection layer (can also adjust band diagram) into the conventional InGaN-based blue LED structure to fabricate InGaN-based red LED. By a variety of spectra measurements (such as PL, EL, TRPL, etc.) and structure characterization (such as AFM、XRD、Raman、TEM, etc.), to investigate the effect of the structural parameters and growth process on the defect density, localization effect, quantum-confined Stark effect, radiation wavelength (In component incorporated rate) and PL efficiency. Based on the experimental results obtained in this project, we clarify the internal physical mechanisms of the carrier injection (production), transport and radiative recombination process, and eventually obtain the optimal structure parameters and growth process for fabricating high-efficiency InGaN-based red LED.