储能电介质作为脉冲电容器的关键材料，一直是国内外的研究热点。反铁电材料因具有高储能密度的独特优势而成为重要的候选材料。同时，环境友好型无铅反铁电储能材料已成为关注的焦点。基于AgNbO3优异的储能特性和晶体畴工程技术对性能的调控优势，本项目提出生长AgNbO3基单晶，并利用畴工程技术优化其极化强度和储能特性。本项目的研究内容包括：确定A位和B位离子掺杂对AgNbO3基反铁电单晶的反铁电—铁电相变临界电场和最大极化强度的影响规律；研究畴工程技术对晶体的电畴结构、介电性能和储能特性的影响；研究电场作用下电畴结构和相结构的演变规律，揭示反铁电单晶的相变机理和储能机制；优化反铁电单晶相变过程中的能量存储行为，探索提高反铁电储能密度的有效途径，为研制脉冲电容器用新型无铅反铁电介质材料提供科学依据和指导。

As a key material for pulse capacitors, energy storage dielectric has been a research hotspot around the world. Lead-free antiferroelectric energy storage materials have attracted much attention, due to its unique advantage of high energy density and environmentally friendly feature. Based on the excellent energy storage property of AgNbO3 and property optimization utilizing the domain engineering technology, our project proposes to grow AgNbO3-based single crystal and use domain engineering technique to enhance its polarization and energy storage property. The research contents include: determine the influence of A- and B-site ions doping on the critical electric field of antiferroelectric-ferroelectric phase transition and the maximum polarization of AgNbO3-based antiferroelectric single crystals; study the influence of domain engineering on domain structure, dielectric and energy storage properties of the crystals; study the evolution of domain structure and phase structure under electric field to reveal the phase transition mechanism and energy storage mechanism in the single crystals; optimize the energy storage behavior during phase transition, explore an effective way to enhance the antiferroelectric energy density, and provide scientific basis and guidance for developing new lead-free antiferroelectric dielectrics for pulse capacitors.