针对当前中高压单极型碳化硅电力电子器件反向耐压与导通电阻之间存在的突出矛盾和一维理论极限，本项目提出一种深槽刻蚀-侧壁倾斜离子注入的全新工艺方法，将超级结引入碳化硅器件的漂移区。这一工艺方法可以克服碳化硅掺杂外延回填工艺不成熟的技术障碍，通过倾斜离子注入深沟槽侧壁的方式形成P型区域，并通过调整注入离子激活率实现电荷平衡，以达成打破碳化硅材料单极型一维极限的目标。本项目将深入开展碳化硅沟槽型超级结漂移区空间电荷分布方式对其电场分布调控机理和优化方法的研究，并致力于高深宽比沟槽刻蚀、小倾角侧壁离子注入及电荷平衡控制等关键工艺技术的研发，并研制比导通电阻显著低于碳化硅一维理论极限的器件。该项目的研究将为打破碳化硅器件性能瓶颈，开展下一代碳化硅器件的研发提供新的设计思路和方向。

Aiming at improving the trade-off between breakdown voltage and specific on resistance in silicon carbide (SiC) power electronics devices, this project develops a trench-etching-and-sidewall-implant method to realize super-junction principle in SiC devices. This method can overcome the limitation of SiC doped epi-regrowth technology. In this method, the P-type region is formed by tiled ion implantation into the trench sidewalls and the charge balance is achieved by adjusting the ion activation rate, thus breaking the SiC unipolar one-dimensional theoretical limit. This project will thoroughly study the influence mechanism of space charge distributions on the electric field distribution. Key process technology, including high-aspect-ratio trench etching, small-tilt sidewall ion implantation and charge balance control will also be created and refined. Based on the above research work, we may provide a new path for the development of the next-generation limit-breaking SiC power devices.