为实现高压高功率密度功率器件，针对当前中高压单极型碳化硅电力电子器件反向耐压与导通电阻之间存在的突出矛盾和一维理论极限，本项目提出将超级结和浮空结技术引入碳化硅器件的漂移区。在超级结器件方面，研究沟槽刻蚀-外延生长填充的工艺方法实现超级结结构，该方法可以克服多次外延技术所需工艺步骤过多的问题，更容易获得更小的元胞尺寸；在浮空结器件方面，通过离子注入-外延生长实现多层浮空结结构，并研究在离子注入区域的晶体再生长动力学机理和缺陷抑制机理。本项目将深入开展碳化硅沟槽型超级结和浮空结空间电荷分布方式对其电场分布调控机理和优化方法的研究，并致力于高深宽比沟槽刻蚀、电荷平衡控制、深沟槽与离子注入区域外延再生长缺陷控制等关键工艺方法的研究，研制比导通电阻显著低于碳化硅一维理论极限的器件。该项目的研究将为打破碳化硅器件性能瓶颈，开展下一代碳化硅器件的研发提供新的设计思路和方向。

Aiming at realizing high-voltage high-power-density power devices and improving the trade-off between breakdown voltage and specific on-resistance in silicon carbide (SiC) power electronics devices, this project develops trench-etching-and-epi-regrowth method and implantation-epi-regrowth approach to realize super-junction and floating-junction principle in SiC devices. The method can overcome the barrier brought by multiple epi-regrowth technology, and can increase the cell density. The charge balance in the super-junction can be achieved by adjusting the doping concentration in the P-type epi-regrowth, and the buried P islands in the floating-junction can be realized by multiple implantation and epi-regrowth, thus breaking the SiC unipolar one-dimensional theoretical limit. This project will thoroughly study the influence mechanism of space charge distributions on the electric field distribution. Key process technology, including high-aspect-ratio trench etching, charge balance control, and high-quality epi-regrowth in the deep trench and on the implanted surface will also be refined. Based on the above research work, we may provide a new path for the development of the next-generation limit-breaking SiC power devices.