本课题针对宽禁带半导体SiC/GaN大功率电力电子器件可靠性机理与技术的关键问题，进行三项理论与实验的创新研究:①提出GaN异质结电荷控制模型，揭示空间电荷与2DEG浓度的物理本质及其与能带的普适规律，为研究F离子增强型器件栅退化与失效机理提供理论基础；②提出基于界面陷阱效应的SiC DMOS器件栅介质隧穿电流模型，探索不同陷阱类型在各种应力环境下降低器件可靠性的机理；③提出SiC外延材料氯基催化生长法，减少三角形缺陷并提高表面平整度。在此指导下，进行该类器件体内电场调制GaN器件加固技术、SiC复合栅介质加固技术和SiC外延材料基面位错控制技术的研究，获得GaN器件寿命指标MTTF>1e7h、SiC栅介质击穿电荷量>70C/cm2、SiC基面位错密度<500/cm2。本课题是一项可靠性器件物理与方法的应用基础研究，对宽禁带半导体电力电子器件的发展具有重要意义。

This project is aimed at the reliability problem of high-power devices based on wide band-gap SiC/GaN semiconductor, committed to three theoretical and experimental creative research topics: 1. To propose a charge control model of GaN heterojunction device, exposing the inner physical property of charge and 2DEG density and the universal law between charge and energy band, offering theoretical basis for studying the mechanism of enhanced-gate terminal degradation and failure. 2. To propose a gate dielectric tunneling current model of SiC DMOS, exploring the mechanism of device reliability descending due to different types of trap in various stress conditions. 3. To propose a catalytic reaction growth method of SiC epitaxial growth based on chlorine to cut triangular defect down and at the same time enhance surface plainness. Based on such theories, the new strengthening technology of GaN device and SiC composite gate dielectric and the basal plane dislocations control technology on SiC epitaxy layer will be studied. Finally GaN device with life span MTTF>1e7 h, the charge- to-breakdown> 70 C/cm2 for SiC MOS structure, and the basal plane dislocations density of SiC epi-layer < 500/cm2 are plan to achieve. This project is a fundamental research of the reliability of SiC and GaN power devices and it will play an important role in progressing of wide band-gap semiconductor power devices.