互补金属氧化物半导体图像传感器(CIS)因其功耗低、集成度高、成本低等优点被逐步应用于航天器成像系统中，其空间质子辐照损伤诱发暗信号噪声问题倍受关注，严重制约了我国新型航天器的顺利研制与在轨效能发挥。本项目在充分调研CIS辐照损伤研究的基础上，采用理论模拟和实验研究相结合的方法，开展质子辐照损伤诱发CIS暗信号噪声研究。通过分析辐照后暗信号噪声增大的物理机制，明确CIS质子辐照损伤的敏感区域；通过开展辐照损伤粒子输运模拟，研究质子在CIS中的电离能量损失、初级反冲原子、初始缺陷三维分布等；将能量损失、缺陷分布等作为初始条件，开展基于TCAD的CIS辐照损伤仿真模拟，建立质子辐照后CIS暗信号噪声模型；以不同像素尺寸、结构的CIS为研究对象，开展辐照实验，并将实验结果同理论模拟结果进行对比，检验暗信号噪声模型的有效性。本项目的研究工作将为CIS抗质子辐照损伤评估和加固技术研究提供理论基础。

Thanks to the low power consumption, high levels of integration and low cost，Complementary Metal Oxide Semiconductor Image Sensor (CIS) has become a key element of optical imaging system and have been widely used in spacecraft. However, the CISs used in these harsh radiation environments are susceptible to damage by protons. Fewer researches have been carried out to study the proton radiation effects on dark signal noise of CISs in our country, which would restrict the development of the new spacecraft and the performance of its orbit. Based on present study status, the proton radiation effects on the dark signal noise of CISs will be carried out by combining with theoretical simulation and experimental data. The sensitive region of the proton radiation in CIS will be obtained by analyzing the mechanism of the radiation effects. The particle transport simulation works will be carried out and the ionizing energy loss (IEL), primary knock-on atoms (PKA), three dimensional distributions of initial bulk defects will be calculated. The Technology Computer Aided Design (TCAD) simulation work will also be carried out and the dark signal noise model will be established. The irradiation experiments of CISs with different pixel size and structure will be carried out. The experimental results will be discussed in comparison with calculation results to show the effectiveness of this model. The achievements of this paper will provide basis of theories and experimental techniques for CISs radiation damage evaluation and radiation hardening study.