利用电致发光研究氧化物阻变中导电通道的动力学过程

阻变过程中微纳尺度导电通道的结构和成分如何随电场变化，是深入理解氧化物阻变效应的物理机制和提高阻变存储器件稳定性的关键科学问题。阐明这种机制并进行有效利用，可获得大面积均匀的阻变结构材料。本项目提出通过测量阻变过程中同步产生的电致发光效应，将具有不同氧空位含量的氧化物的电致发光光谱作为“特征指纹”，来“标识”导电通道的空间位置，并确定阻变过程中导电通道成分和结构的变化，对宏观水平上氧化物单极阻变结构中的导电通道的动力学过程进行非破坏性研究，通过同步测量阻变过程中的电致发光荧光特性(光强、荧光成像、光谱随电场变化规律等)，研究电流分布、发光位置、光谱结构和形貌变化的相互影响关系，深入分析导电通道的分布规律、微结构和化学组分随电场的变化关系，全面了解阻变过程中导电通道形成和熔断过程的物理机制和关键因素，力争在氧化物阻变机理研究和提高阻变稳定性方面获得突破。

A major obstacle for the implementation of memristive memory or logic technology is the large cycle-to-cycle and device-to-device variability. The dynamics process of conducting filaments rupture and formation plays a critical role in the resistance switching (RS) effect and gives rise to the instability of RS. Herein, we propose to investigate the electroluminescence emission synchronously during RS nondestructively at the device scale. By in-situ measurement of EL intensity, emission image, and spectra during switching process, we can not only demonstrate the existence of conductive filaments, but also study the change of micro structure and components of conductive filaments during RS. These findings will provide important information for the observed variability in device performance and represent the scientific basis for clarifying the RS mechanism and developing stable memristive devices.