项目研究新型SOI FinFET器件的单粒子效应产生机理与影响因素，提出SOI FinFET抗单粒子效应加固方法。研究SOI FinFET中，重离子导致的单粒子瞬态电流的产生过程和基本物理机制。对比分析不同注入位置和漏极电压偏置下SOI FinFET单粒子瞬态电流，明确单粒子效应的不同电荷收集方式在器件中产生和消失的物理过程。通过分析总剂量和单粒子效应的耦合效应，实现单粒子和总剂量的耦合辐射效应研究。研究SRAM的单粒子效应，得到SRAM的翻转阈值等关键参数。对比纳米级SOI 单粒子效应的仿真和实验结果，分析新结构器件的辐射失效机理，建立辐射损伤的物理模型，模型误差<8%。研究成果可直接应用于纳米SOI FinFET可靠性提升和辐射损伤防护中，为纳米工艺抗单粒子效应器件电路设计加固提供理论基础和可靠性表征方法。拟在国内外重要期刊发表论文15篇，国家发明专利3项，培养博士生6名，硕士生6名。

The project investigates the generating mechanism and impact factors of the single event effects in the novel SOI FinFET devices and proposes the reinforcement method of the SOI FinFETs resistance to single event effects. The generating process and the basic physical mechanism of the single event transient current caused by the heavy ions are investigated. The single event transient currents in SOI FinFETs at different injected locations and values of drain bias are comparatively analyzed.The the physical process of the generation and disappearance for different charges collecting methods of the single event effects is defined. The coupling radiation effects of the single event and total dose are investigated by analyzing the coupling effect of the total dose and single event effects. The upset threshold and other key parameters of SRAM are obtained by researching the single event effects of SRAM. The physical model of radiation damage whose model error is less than 8% is established by comparing the simulation with experimental results of the single event effects in nano-scale SOI and analyzing the radiation failure mechanism of the new structure devices.Research findings can be directly applied to enhance the reliability and resistance to radiation of nanometer SOI FinFETs, providing the theoretical basis and reliability characterizing methods for designing and reinforcing the resistance to single event effects of the circuits. 15 papers will be published in the leading journals at home and abroad, 3 national patents will be invented, 6 doctoral and 6 graduate students will get their Phd degree and master degree at the end of the project.