电子束泵浦AlGaN深紫外激光器的研究

深紫外半导体激光器在国防建设和国民经济建设中具有广阔的应用前景和巨大的市场价值。本项目针对高Al组分AlGaN很难获得高质量、高空穴载流子浓度、低电阻率的p型掺杂材料，制约电注入型p-n结AlGaN深紫外半导体激光器发展的问题，提出开展电子束泵浦AlGaN深紫外激光器的研究。重点解决电子束激励方式获得深紫外激光的科学问题和实现途径。通过开展基于三极结构场致电子发射的高效小型化电子束源的研究；高Al组分AlxGa1-xN/AlN多量子阱有源层的能带设计与调控生长；低损耗高增益光学谐振腔的结构设计与材料生长；电子束泵浦有源层实现粒子数反转的物理过程和光跃迁机制的研究，以及电子束泵浦深紫外激光器性能评估，为获得高效、实用化的深紫外激光器奠定理论和实验基础。

Deep ultraviolet (DUV) semiconductor laser has a broad application prospect and great market value in the national defense construction and national economy construction. However, in fact, the development of current injection type p-n junction AlGaN DUV laser diode is restricted due to the difficulty to obtain high quality, high hole carrier concentration and low resistivity of p-type AlGaN with high Al content. In this project, the electron-beam-pumped AlGaN DUV laser will be investigated. It focuses on solving the scientific problems and implementation approach of DUV laser obtained by the method of electron-beam-pumping. In detail of the project, the research on efficient miniaturization electron-beam source based on triode structure field emission will be carried out. The energy band of high Al content AlxGa1-xN/AlN multiple quantum wells (MQW) active layer will be designed and controlling the growth of materials. The structure of low loss, high gain optical resonator will be designed and grown. It also investigates the physical process of population inversion realized by electron-beam pumping the active layer and the optical transition mechanism, as well as the performance evaluation of electron-beam-pumped DUV laser. The aims of this project are to lay theoretical and experimental basis for obtaining high efficient and practical DUV laser.