InGaN基蓝色和绿色半导体激光器，与现有的红色半导体激光器一起构成全半导体化的三基色光源，在激光显示等领域有巨大应用和市场。可是，InGaN绿光激光器发展缓慢，主要原因是，其有源区In组分增加，材料生长困难增大，极化效应对量子阱发光效率不利影响变大，后续p型外延层的高温生长也容易破坏有源区量子阱结构，加之Al2O3衬底与GaN有16%的晶格失配。所以1996年以Al2O3为衬底研制成功了InGaN基蓝、紫光激光器，而绿光激光器却没能成功，直到2009年才以GaN单晶为衬底研制成功。我国至今还没有见到有InGaN绿色激光器实现激射的报道。为克服上述困难，本项目提出采用和GaN晶格匹配较好的SiC为衬底，研制解理腔InGaN绿光激光器，并创新提出p-n结倒置结构。如能成功，将使我国InGaN基紫、蓝、绿光激光器研究领域形成有核心专利的自主知识产权，将产生重大的经济和社会效益。

The fully semiconductor based trichromatic light source, to which a reliable solution is the combination of the InGaN based blue, green light LD and the already commercialized red light LD, has promising application prospects and wide market in the field of laser displaying. However, the InGaN based green light LD has seen a slow development, that the InGaN based green light LD was not achieved until 2009, long after the year 1996 when the InGaN based blue light LD was successfully made. The main reasons are as follows: Firstly, the InGaN green light LD needs In rich active layer, which is very difficult for InGaN epitaxy growth; Secondly, the quantum efficiency of In rich active layer based quantum well is strongly affected by the polarization effect; Thirdly, the In rich active layer based quantum well structure is easily damaged by stress exerted by afterward grown p-InGaN layer, which needs high temperature growth condition; Fourthly, the lattice mismatch between GaN and Sapphire substrate is as large as 16%. In order to conquer those problems mentioned above, this project is about to use SiC substrate, which has small lattice mismatch referring to GaN epi-layer, to prepare InGaN based cleavage cavity green light LD with a upside-down placed n-p junction. If project fully succeeded, our nation would have self-developed hi-tech patent in the field of InGaN based purple, blue, green light laser device. The outcome of this project would greatly benefit the country both economically and socially.