薄膜体声波谐振器（FBAR）在射频电路中有着广泛的应用。本项目提出研究融合了肖特基结和压电堆的电调FBAR新器件。研究内容包括基于肖特基结与压电谐振相互耦合机理、电调特性评估和模型建立、电调FBAR器件研制和验证、电调滤波器技术。课题有望获得无线通信所需的电调器件：电调范围80-100MHz@2GHz，引入插损低于1dB，Q值保持1000以上，驱动电压0-5V；目前，这种电调技术还未见他人报道，所述技术指标也是其他电调技术所无法达到的。通过本项目的实施，有助于研发出一系列新颖高性能的集成化的射频电调器件和电路，对于推动单芯片集成高性能射频无线收发机具有重要意义。

Thin Film Bulk Acoustic Resonator (FBAR) has been widely used in wireless communication circuits. A novel tunable FBAR, mixed with schottky diode and piezo resonator, is proposed in this application. This project research content include device coupling mechanism between schottky diode and piezo-resonator, tune property investigation, modeling, fabrication, verification and tunable RF filter design rule. Aimed at meeting the demand of high performance integrated wireless communication, the key tune specifications are tune range from 80 to 100MHz under 2GHz operation frequency, introduced loss below 1dB, holding Q fact above 1000, bias voltage 0-5V. Those Specifications are very difficult achieved to other tune solution. And this new tunable device and technology are not reported before. We hope to base on this new technology to develop a series of new tunable integrated RF devices. This project is very important to promote high performance integrated wireless RF transmitter receiver.