利用原子层沉积技术在硅上生长Al2O3-Yb2O3-Er2O3纳米层状复合结构发光薄膜，研制适合过热电子注入激发的高效率硅基MOS结构红外电致发光器件。利用Yb3+与Er3+两种离子的能级匹配以及Yb2O3薄膜的高浓度Er离子掺杂特性，和Al2O3薄膜的强过热电子输运能力相结合，通过Yb的共掺提高对Al2O3薄膜中Er3+离子的掺杂浓度和激发效率，研究Yb原子层对Er3+离子周围晶体场的改变对于激发截面和弛豫寿命的影响。通过设计周期性能带结构的纳米层状薄膜，实现对过热电子加速和碰撞激发过程的分层控制，从而获得对过热电子的多次级联加速以及碰撞发光过程，提升器件的电致发光效率。研究多层介质薄膜中电子加速、输运和碰撞以及电荷被缺陷和界面态俘获过程与器件老化的内在联系，探索提高电注入稳定性和器件寿命的有效方法。力争使得稀土掺杂氧化物薄膜红外电致发光器件的外量子效率达到20%。

This study will fabricate Al2O3-Yb2O3-Er2O3 nanolaminate composite films on silicon by atomic layer deposition, and develop a high efficiency Si-based MOS structured electroluminescent devices, which are suitable for hot electron injection excitation. Using the energy level matching between Yb3+ and Er3+ ions and the high Er concentration doping characteristic of Yb2O3 film, combined with the strong transport capacity of hot electrons in Al2O3 film, to improve the doping concentration and excitation efficiency of Er3+ ions in Al2O3 film by Yb codoping strategy. The Yb atomic layer could modify the surrounding crystal field of Er3+ ions, whose effect on the excitation cross section and relaxation lifetime will be studied. By designing the periodic band structure of nanolaminate film, the separate control of the hot electron acceleration and the collision excitation process can be realized. The cascade acceleration of hot electrons and the subsequent collision electroluminescence process can be obtained to improve the luminescent efficiency of the device. The effects of electron acceleration, transport and collision in the multilayered dielectric films, and the relationship between the charge-defect & interfacial state capture process and device aging will be investigated. Effective methods to improve the stability of the current injection together with the lifetime of devices will be explored. The external quantum efficiency of Si-based infrared electroluminescence device from rare earth doped oxide film could be increased to 20%.