细长管筒内壁自阳极磁控溅射电场反转离子加速新方法及高结合力膜层沉积研究

细长管道内壁物理气相沉积一直是真空镀膜行业的痛点。其核心问题是管壁自身作为阳极磁控放电、管壁无法施加偏压，使得膜基界面和镀膜过程缺乏离子轰击，结果膜基结合力太差、膜层结构疏松。能否不用偏压也获得离子轰击效应呢？结合美国贝尼特实验室身管磁控镀膜存在的问题，本课题提出了一种磁控电场反转离子加速等效偏压轰击的新方法，即在原有二极（靶为阴极、管壁为阳极）磁控溅射放电的基础上，引入可控高功率磁控脉冲放电解决高密度等离子体产生，随后电场立即反转、对等离子体中的离子进行加速，进而获得管壁膜层的离子轰击效应，实现了等效偏压。因此本项研究包括：新型电源电路结构设计、管壁自阳极高脉冲磁控溅射、电场反转离子加速规律等等。最终希望在近距离高功率脉冲放电规律和机制研究中有所突破，获得一种具有自主知识产权的内壁镀膜新技术，解决管内镀膜一直没有解决的结合力太低的瓶颈问题，进而推动等离子体镀膜技术和管道应用技术的发展。

Physical vapor deposition (PVD) on the inner wall of slender pipes has always been a pain point in the vacuum coating industry. Its core problem is that the tube wall itself acts as the anode for magnetron sputtering, which makes a bias not be applied on the wall and ion bombardment to the interface and films impossible, consequently the adhesion between the film and substrate is too weak and microstructure of deposited films is less dense. Can we also get the ion bombardment effect without bias? Combined with the problems existing in the magnetron sputtering of tube in The Bennet laboratory in the United States, we propose a new method of ion acceleration and bombardment with equivalent bias based on electric-field inverting of magnetron system. That is, on the basis of the original bipolar (target cathode, tube wall as anode) magnetron sputtering discharge, controlled pulsed high-power magnetron discharge is imposed to produce high-density plasma, and then the electric field immediately reverses to accelerate the ions in the plasmas, and ion bombardment of deposited film is achieved as an equivalent bias does. Therefore, this study includes: design of new power circuit structure, pulsed high power magnetron sputtering with small distance between the cathode and anode, ion acceleration by inverting of electric field and so on. Finally, we hope to make a breakthrough in the study of the law and mechanism of high-power pulse discharge with small gaps, and achieve a new technology with independent intellectual property. This will solve the bottleneck that the adhesion between the film and substrate is too low and promote the development of plasma coating technology and pipeline application technology.