针对目前国际主流PVD公司（Hauzer等）采用中频PECVD制备含氢DLC沉积速率慢、放电依赖工件，而微波放电沉积速率快，但硬件成本高、结构复杂等问题，我们设想：能否有一种成本低廉、沉积速率高，又不依赖工件放电的DLC制备方法呢？本项目借鉴电弧增强放电方法（利用遮挡电弧逃逸的电子去激发高密度等离子体，即AEGD），提出了一种基于热阳极、碳阴极靶、高脉冲电流电弧增强辉光放电的新方法，分别解决了含碳气体环境放电“阳极消失”、金属弧靶放电膜层污染以及高密度等离子体产生的问题，进而获得高密度、纯净等离子体，以实现含氢DLC膜层高速高质量沉积。因此本课题的研究内容包括：脉冲放电电源以及AEGD放电系统的研制、电弧增强辉光放电机制和规律、基于AEGD放电的DLC沉积及结构研究，期望对电弧诱导的辉光放电机制和规律进行更深的研究和理解，同时获得一种成本低廉、硬件简单的高速高质量DLC膜层沉积方法。

The Hauzer company has deposited the DLC films using middle-frequency discharge with a lower rate and the discharge is also related to the workpiece. The microwave discharge may lead to a higher deposition rate, however the technology is featured by higher cost and complexity of hardware. Is it possible to invent a new technology with lower cost,higher deposition rate and the discharge slightly related to the workpiece? We learn from the arc enhanced glow discharge (shortly AEGD, the blocked cathodic arc gives the electrons, which ionize the gas species during their flight to the anode). We propose a novel arc enhanced glow discharge technology based on hot anode, carbon cathode and pulsed current mode. These will suppress the disappear of anode owing to the “poison effect”, eliminate the contamination of metal ion due to the utilization of metal target and produce the high-density plasma produced by pulsed glow discharge. The pure plasmas with high density may be achieved and high-reate deposition of DLC films is expected. The project includes the following contents: development of pulsed power supply and AEGD system, the investigation of mechanism and law of arc enhanced glow discharge , deposition and analysis of DLC fims based on the AEGD. We hope to understand well the mechanism and law of arc enhanced glow discharge and invent a novel technology to deposit DLC films with lower cost, simple hardware and high deposition rate.