Total Ionizing Dose Responses of Forward Body Bias Ultra-Thin Body and Buried Oxide FD-SOI Transistors
Total Ionizing Dose Responses of Forward Body Bias Ultra-Thin Body and Buried Oxide FD-SOI Transistors
复制标题
正向体偏压超薄体和埋氧 FD-SOI 晶体管的总电离剂量响应
DOI：
10.1109/tns.2019.2901755
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发表时间：
2019-02
影响因子：
1.8
通讯作者：
Guo Qi
中科院分区：
文献类型：
--
作者：
Zheng Qiwen;Cui Jiangwei;Xu Liewei;Ning Bingxu;Zhao Kai;Shen Mingjie;Yu Xuefeng;Lu Wu;He Chengfa;Ren Diyuan;Guo Qi
本文研究了商业铸造厂常用的正向体偏压(FBB)超薄体和埋氧层全耗尽绝缘体上硅(UTBB FD-SOI)晶体管的总电离剂量(TID)响应。实验结果表明，在FBB nMOSFET中施加背栅偏置(背栅偏置)不能减小TID引起的阈值电压漂移。对偏置条件的依赖关系也进行了探讨，揭示了埋层氧化物中氧化物陷阱电荷(NOT)的形成受空间电荷诱导的电场的影响。此外，还首次研究了阈值电压选择对未掺杂沟道的UTBB FD-SOI晶体管TID响应的影响。最后，观察到了阈值电压的TID增强背栅偏置控制，这是UTBB FD-SOI晶体管TID响应的一个新现象。
This paper investigates the total ionizing dose (TID) responses of forward body bias (FBB) ultrathin body and buried oxide fully depleted silicon-on-insulator (UTBB FD-SOI) transistors, which are commonly used in commercial foundries. The experimental results demonstrate that TID-induced threshold voltage shift in FBB nMOSFET cannot be mitigated by applying biasing to back-gate (back-gate biasing). Bias condition dependence has also been explored, revealing that building up of the oxide-trapped charge (Not) in the buried oxide is affected by the electric field induced by the space charge. Moreover, the effect of threshold voltage option on TID responses of UTBB FD-SOI transistors with the undoped channel was first explored. Finally, the TID-enhanced back-gate biasing controlling of the threshold voltage was observed, which is a new phenomenon for the TID responses of UTBB FD-SOI transistors.
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影响因子：
1.8
作者：
Schwank, JR;Ferlet-Cavrois, V;Dodd, PE
通讯作者：
Dodd, PE
DOI：
10.1109/radecs.1999.858599
发表时间：
1999-03
期刊：
1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)
影响因子：
--
作者：
J. Schwank;M. Shaneyfelt;P. Dodd;J. Burns;C. Keast;P. Wyatt
通讯作者：
J. Schwank;M. Shaneyfelt;P. Dodd;J. Burns;C. Keast;P. Wyatt
影响因子：
1.8
作者：
W. Jenkins;S. T. Liu
通讯作者：
W. Jenkins;S. T. Liu
影响因子：
1.7
作者：
P. Kushwaha;N. Paydavosi;S. Khandelwal;C. Yadav;H. Agarwal;J. Duarte;C. Hu;Y. Chauhan
通讯作者：
P. Kushwaha;N. Paydavosi;S. Khandelwal;C. Yadav;H. Agarwal;J. Duarte;C. Hu;Y. Chauhan
DOI：
10.1007/s11432-016-5561-5
发表时间：
2016-04
期刊：
Science China Information Sciences
影响因子：
--
作者：
K. Cheng;Ali Khaki-Firooz
通讯作者：
K. Cheng;Ali Khaki-Firooz