High Sensitive pH Sensor Based on AlInN/GaN Heterostructure Transistor.
High Sensitive pH Sensor Based on AlInN/GaN Heterostructure Transistor.
复制标题
基于AlInN/GaN异质结构晶体管的高灵敏度pH传感器
DOI：
10.3390/s18051314
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发表时间：
2018-04-24
期刊：
影响因子：
--
通讯作者：
Zheng Y
中科院分区：
文献类型：
--
作者：
Dong Y;Son DH;Dai Q;Lee JH;Won CH;Kim JG;Chen D;Lee JH;Lu H;Zhang R;Zheng Y
AlInN/GaN高电子迁移率晶体管（HEMT）与传统的AlGaN/GaN HEMT相比具有更好的性能。本工作研究了一个类似的HEMT AlInN/GaN器件的pH传感器功能与一个开放的栅极。结果表明，Al 0.83 In 0.17 N/GaN器件在水溶液中具有良好的pH传感功能，具有较高的灵敏度（对于AlInN/GaN为-30.83 μA/pH，对于AlGaN/GaN为-4.6 μA/pH），并且相对于AlGaN/GaN器件具有更快的响应时间、更低的退化和良好的稳定性，这是由于晶格匹配导致的Al 0.83 In 0.17 N/GaN中较高的二维电子气（2DEG）密度和较薄的势垒层。另一方面，发现开栅的几何形状对pH灵敏度有明显的影响。适当增加开栅区的宽度和缩短开栅区的长度可以提高灵敏度。然而，当开栅宽度太大或太小时，pH敏感性反而会受到抑制。设计最佳的宽度与长度的比率对于实现高灵敏度是重要的。这项工作表明，AlInN/GaN基2DEG载波调制器件将是高性能pH传感器和其他相关应用的良好候选者。
The AlInN/GaN high-electron-mobility-transistor (HEMT) indicates better performances compared with the traditional AlGaN/GaN HEMTs. The present work investigated the pH sensor functionality of an analogous HEMT AlInN/GaN device with an open gate. It was shown that the Al0.83In0.17N/GaN device demonstrates excellent pH sense functionality in aqueous solutions, exhibiting higher sensitivity (−30.83 μA/pH for AlInN/GaN and −4.6 μA/pH for AlGaN/GaN) and a faster response time, lower degradation and good stability with respect to the AlGaN/GaN device, which is attributed to higher two-dimensional electron gas (2DEG) density and a thinner barrier layer in Al0.83In0.17N/GaN owning to lattice matching. On the other hand, the open gate geometry was found to affect the pH sensitivity obviously. Properly increasing the width and shortening the length of the open gate area could enhance the sensitivity. However, when the open gate width is too larger or too small, the pH sensitivity would be suppressed conversely. Designing an optimal ratio of the width to the length is important for achieving high sensitivity. This work suggests that the AlInN/GaN-based 2DEG carrier modulated devices would be good candidates for high-performance pH sensors and other related applications.
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影响因子：
4.9
作者：
Ostermaier, Clemens;Pozzovivo, Gianmauro;Kuzmik, Jan
通讯作者：
Kuzmik, Jan
影响因子：
8.4
作者：
Sansalvador, Isabel M. Perez de Vargas;Fay, Cormac D.;Diamond, Dermot
通讯作者：
Diamond, Dermot
影响因子：
4.9
作者：
Schuette, Michael L.;Ketterson, Andrew;Saunier, Paul
通讯作者：
Saunier, Paul
DOI：
10.3390/s90604669
发表时间：
2009
期刊：
Sensors (Basel, Switzerland)
影响因子：
--
作者：
Anderson T;Ren F;Pearton S;Kang BS;Wang HT;Chang CY;Lin J
通讯作者：
Lin J
影响因子：
2.2
作者：
Guidelli, Eder Jose;Guerra, Elidia Maria;Mulato, Marcelo
通讯作者：
Mulato, Marcelo