Fabrication of GaN-Based Heterostructures with an InAlGaN/AlGaN Composite Barrier
Fabrication of GaN-Based Heterostructures with an InAlGaN/AlGaN Composite Barrier
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具有 InAlGaN/AlGaN 复合势垒的 GaN 基异质结构的制造
DOI：
10.1088/0256-307x/33/8/088102
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发表时间：
2016-08
影响因子：
3.5
通讯作者：
Zhang JC
中科院分区：
文献类型：
--
作者：
Quan Ru-Dai;Zhang Jin-Cheng;Xue Jun-Shuai;Zhao Yi;Ning Jing;Lin Zhi-Yu;Zhang Ya-Chao;Ren Ze-Yang;Hao Yue;Zhang JC
通过低压金属有机化学气相沉积系统，在蓝宝石（0001）衬底上生长了具有InAlGaN/AlGaN复合势垒的gan基异质结构。用x射线光电子能谱法测定了InAlGaN层的组成，用高分辨率x射线衍射鉴定了异质结构的结构和晶体质量，用原子力显微镜观察了样品的表面形貌，并在室温下进行了霍尔效应和电容电压测量以评价异质结构的电学性能。InAlGaN层的Al/In比值为4.43，表明InAlGaN四元层与GaN通道晶格基本匹配。电容电压结果表明，在InAlGaN层和AlGaN层之间没有形成寄生通道。与InAlGaN/AlGaN/GaN异质结构相比，InAlGaN/AlGaN/GaN异质结构的电学性能有明显改善。研究了AlGaN层厚度对异质结构电性能的影响。当AlGaN层的最佳厚度为5 nm时，样品的2DEG迁移率为1889.61 cm2/V s，片密度为1.44 × 1013 cm−2，片电阻低至201.1 ω/sq。
GaN-based heterostructures with an InAlGaN/AlGaN composite barrier on sapphire (0001) substrates are grown by a low-pressure metal organic chemical vapor deposition system. Compositions of the InAlGaN layer are determined by x-ray photoelectron spectroscopy, structure and crystal quality of the heterostructures are identified by high resolution x-ray diffraction, surface morphology of the samples are examined by an atomic force microscope, and Hall effect and capacitance-voltage measurements are performed at room temperature to evaluate the electrical properties of heterostructures. The Al/In ratio of the InAlGaN layer is 4.43, which indicates that the InAlGaN quaternary layer is nearly lattice-matched to the GaN channel. Capacitance–voltage results show that there is no parasitic channel formed between the InAlGaN layer and the AlGaN layer. Compared with the InAlGaN/GaN heterostructure, the electrical properties of the InAlGaN/AlGaN/GaN heterostructure are improved obviously. Influences of the thickness of the AlGaN layer on the electrical properties of the heterostructures are studied. With the optimal thickness of the AlGaN layer to be 5 nm, the 2DEG mobility, sheet density and the sheet resistance of the sample is 1889.61 cm2/V s, 1.44 × 1013 cm−2 and as low as 201.1 ω/sq, respectively.
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影响因子：
4
作者：
A. Yasan;R. Mcclintock;K. Mayes;S. Darvish;H. Zhang;P. Kung;M. Razeghi;Sungho Lee;J. Y. Han
通讯作者：
A. Yasan;R. Mcclintock;K. Mayes;S. Darvish;H. Zhang;P. Kung;M. Razeghi;Sungho Lee;J. Y. Han
影响因子：
6.7
作者：
J. Shang;Bing Zhang;Chao-Min Wu;L. Cai;J. Y. Zhang;J. Yu;Qingtao Wang
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J. Shang;Bing Zhang;Chao-Min Wu;L. Cai;J. Y. Zhang;J. Yu;Qingtao Wang
通过脉冲金属有机化学气相沉积在 SiC 衬底上生长几乎晶格匹配的 InAlN/GaN 高电子迁移率晶体管
影响因子：
4
作者：
Hao, Yue;Liu, Ziyang;Xue, Junshuai;Zhou, Xiaowei;Lin, Zhiyu;Ma, Juncai;Zhang, Jincheng
通讯作者：
Zhang, Jincheng
影响因子：
4
作者：
J. Xue;Jincheng Zhang;Y. Hou;Haosen Zhou;Jinfeng Zhang;Y. Hao
通讯作者：
J. Xue;Jincheng Zhang;Y. Hou;Haosen Zhou;Jinfeng Zhang;Y. Hao
影响因子：
4.9
作者：
Lim, T.;Aidam, R.;Ambacher, O.
通讯作者：
Ambacher, O.