Luminescence degradation of InGaN/GaN violet LEDs
Luminescence degradation of InGaN/GaN violet LEDs
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InGaN/GaN 紫光 LED 的发光衰减
DOI：
10.1016/j.jlumin.2006.01.263
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发表时间：
2007
影响因子：
3.6
通讯作者：
Yang, Zhjian
中科院分区：
文献类型：
--
作者：
Qin, Zhixin;Zhang, Guoyi;Lin, Liang;Shang, Shuping;Chen, Zhizhong;Yu, Tongjun;Yang, Zhjian
研究了不同铟组分的InGaN/GaN紫光发光二极管（LED）在注入电流密度为26.5和79.5A/cm~2时的光输出功率和电学性能的变化。当注入电流密度为26.5A/cm~2时，低铟含量（2%）的LED比10%铟含量的LED输出功率衰减更快。在79.5A/cm 2的大注入水平下，10%和2%铟组分的LED之间的光功率退化的差异变得很小。基于电流-电压曲线、L-I曲线以及光功率随应力时间的退化的结果的讨论表明，具有10%铟组分的LED比具有2%铟组分的LED具有更好的性能。据信，铟增强辐射复合有助于防止电应力期间的缺陷产生。
The changes of optical output power and electrical property of InGaN/GaN violet light-emitting diodes (LEDs) with different indium compositions have been investigated, under injection current densities of 26.5 and 79.5A/cm2. When injection current density was 26.5A/cm2, output power of LEDs with low indium composition (2%) degraded more rapidly than the ones of 10% indium inside. At a large injection level of 79.5A/cm2, the difference in optical power degradation between LEDs of 10% and 2% indium composition became small. A discussion based on the results of current–voltage curves , L–I curves, as well as optical power degradation with stress time indicates that LEDs with 10% indium composition have better performance than LEDs with 2% indium composition. It is believed that the indium enhancement of radiative recombination helps preventing defect generation during electrical stress.
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影响因子：
1.6
作者：
Cao, XA;Sandvik, PM;Arthur, SD
通讯作者：
Arthur, SD
影响因子：
4
作者：
Cao, XA;Arthur, SD
通讯作者：
Arthur, SD
影响因子：
4.9
作者：
Huh, C;Schaff, WJ;Park, SJ
通讯作者：
Park, SJ
影响因子：
4
作者：
L. Sugiura
通讯作者：
L. Sugiura
影响因子：
2.6
作者：
Wuu, DS;Wang, WK;Fang, JS
通讯作者：
Fang, JS