Effects of nitrogen vacancies induced by Mn doping in (Ga,Mn)N films grown by MOCVD
Effects of nitrogen vacancies induced by Mn doping in (Ga,Mn)N films grown by MOCVD
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MOCVD生长(Ga,Mn)N薄膜中Mn掺杂引起的氮空位的影响
DOI：
10.1088/0022-3727/41/12/125002
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发表时间：
2008-05
影响因子：
3.4
通讯作者：
Zhang G Y
中科院分区：
文献类型：
--
作者：
Yan W S;Wang C D;Chen D L;Yang X L;Huang S;Chen Z T;Fang H;Zhang G Y
研究了金属有机化学气相沉积(MOCVD)法生长的(Ga，Mn)N薄膜中掺入的氮空位(VN)对其电子结构和输运性质的影响。(Ga，Mn)N薄膜中n型载流子浓度的显著增加归因于Mn掺杂引起的额外的VN。随温度变化的霍尔数据表明，在高温区(Ga，Mn)N薄膜中，附加的VN是主要的散射机制。(Ga，Mn)N薄膜的MnL2，3 X射线吸收谱呈多重态结构，表明Mn离子主要以Mn2+(D5)态存在。这可以归因于电子从VN转移而来，这与电学性质很好地一致。提出了一个考虑电荷转移的能级模型来解释系统中观察到的电子结构和输运性质。
We have investigated the effects of nitrogen vacancies (VN) induced by Mn doping on the electronic structure and transport properties of (Ga,Mn)N films grown by metal organic chemical vapour deposition (MOCVD). The significant increase in n-type carrier concentration in the (Ga,Mn)N film is attributed to the additional VN induced by Mn doping. Temperature-dependent Hall data indicate that the additional VN is the dominant scattering mechanism in the (Ga,Mn)N film in higher temperature regions. The Mn L2,3 x-ray absorption spectra of the (Ga,Mn)N film shows a multiplet structure, indicating that the Mn ions are present mainly in the Mn2+(d5) states. These can be attributed to the electrons transferring from VN, which is well consistent with the electrical properties. An energy level model involving the charge transfer is proposed to explain the observed electronic structure and transport properties in the system.
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影响因子：
4
作者：
R. Korotkov;J. Gregie;B. Wessels
通讯作者：
R. Korotkov;J. Gregie;B. Wessels
影响因子：
3.2
作者：
E. Biegger;M. Fonin;U. Rüdiger;N. Janssen;M. Beyer;T. Thomay;R. Bratschitsch;Y. Dedkov
通讯作者：
E. Biegger;M. Fonin;U. Rüdiger;N. Janssen;M. Beyer;T. Thomay;R. Bratschitsch;Y. Dedkov
影响因子：
4
作者：
G. Thaler;M. Overberg;B. Gila;R. M. Frazier;C. Abernathy;S. Pearton;J. Lee;See‐Hyung Lee;Y. Park;Z. Khim;J. Kim;F. Ren
通讯作者：
G. Thaler;M. Overberg;B. Gila;R. M. Frazier;C. Abernathy;S. Pearton;J. Lee;See‐Hyung Lee;Y. Park;Z. Khim;J. Kim;F. Ren
DOI：
10.1116/1.2201052
发表时间：
2006-06
期刊：
Journal of Vacuum Science and Technology
影响因子：
--
作者：
W. Fenwick;A. Asghar;Shalini Gupta;Hun Kang;M. Strassburg;N. Dietz;S. Graham;M. Kane;I. Ferguson
通讯作者：
W. Fenwick;A. Asghar;Shalini Gupta;Hun Kang;M. Strassburg;N. Dietz;S. Graham;M. Kane;I. Ferguson
影响因子：
64.8
作者：
Ohno, Y;Young, DK;Awschalom, DD
通讯作者：
Awschalom, DD