Studies of Optical Microlithographic Processes

本提案寻求支持pi在微光刻工艺方面的研究。本文建立了一套新的暴露漂白模型方程，适用于驻波效应存在且不可忽略的情况。将用路径积分和精确微分的形式来建立抗蚀剂溶解的射线追踪模型，以得到封闭形式的开发线轮廓。先前为图像反转和CEL过程导出的解析解将与溶解过程的确切公式相混淆。通过明确考虑厚度不均匀性和各种界面反射率，探索多层抗蚀过程。深紫外诱导的正极抗蚀剂的图像稳定和硬化将通过测量光密度变化和抗蚀剂膜中的交联梯度来研究。最后，研究了掺银锗硒抗蚀剂的扩展暴露-漂白模型，并对这些无机抗蚀剂的分辨能力进行了研究。

This proposal seeks support for the PIs studies on microlithographic processes. A new set of exposure bleaching model equations, applicable when standing wave effects are present and non-negligible are being developed. The ray-tracing model for resist dissolution will be formulated in terms of path integrals and exact differentials to yield the developed line contours in closed forms. Analytical solutions derived earlier for the image reversal and CEL processes will be convoluted with the exact formulation of the dissolution process. Multi-level resist processes will be explored by explicitly considering thickness non-uniformities and various interface reflectivities. Deep UV induced image stabilization and hardening in positive resists will be studied by relating measured optical density changes and cross link gradients in the resist film. Finally, the extended exposure-bleaching models of Ag-doped Ge Se resists will be studied and the resolution capability of these inorganic resists investigated.