Simulation of High Speed AlGaAs/GaAs Heterojunction Bipolar Transistors

这是一个延续的研究计划，在大学的 马萨诸塞州的先进半导体计算机建模 装置. 一个具体的目标是扩展 异质结半导体器件的数值模拟 速度和/或高频应用。 在过去的12年里， 我们已经模拟了半导体器件，从大VMOS功率 晶体管到亚微米可渗透基极晶体管（PBT） 实验室 鉴于最近对高速异质结的兴趣， 诸如HEMT（高电子迁移率晶体管）和HBT的晶体管 （异质结双极晶体管），这是自然的，以扩大我们的 半导体器件建模的研究， 异质结 重点将放在AlGaAs/GaAs系统上， InGaP/GaAs异质结和InGaAs/GaAs应变层 如果时间允许，也可以包括异质结。 基本 要建模异质结GaAs结构是垂直器件， 作为HBT。 热载流子输运在渐变基区的这些 将对设备进行调查。 瞬态和小信号交流 将进行漂移扩散分析，以准确确定 单位电流增益截止频率。

This is a continuation of the research program at the University of Massachusetts on the computer modeling of advanced semiconductor devices. A specific objective is to extend the state-of-the-art of the numerical modeling of heterojunction semiconductor devices for high speed and/or high frequency applications. Over the past twelve years, we have modeled semiconductor devices ranging from large VMOS power transistors to submicron permeable base transistors (PBT) in our laboratory. In view of recent interest in high speed heterojunction transistors such as HEMT (high electron mobility transistors) and HBT (heterojunction bipolar transistors), it is natural to extend our research to the modeling of semiconductor devices involving heterojunctions. Focus will be placed on the AlGaAs/GaAs system but the InGaP/GaAs heterojunction and the InGaAs/GaAs strained-layer heterojunction may be included as well, time permitting. The basic heterojunction GaAs structures to be modeled are vertical devices such as HBTs. Hot carrier transport in the graded base region of these devices will be investigated. Both transient and small-signal ac drift-diffusion analysis will be performed to accurately determine the unit-current gain cutoff frequency.