Monte Carlo Simulation of Superlattice Devices

原子级控制制造的可能性推动了新型超小型半导体的设计。在埃尺度上制造意味着量子力学效应将是重要的。晶体生长技术的进步使异质结构器件制造的原子尺度控制成为可能，其中的第一个成果就是超晶格。为了对器件进行表征，必须得到电子传递系数。垂直于晶格结构的电子输运很重要，但由于超晶格的尺度与原子晶格具有相同的数量级，因此很难计算。这个工程启动项目将使用蒙特卡罗模拟技术来研究超晶格器件中的输运。高场效应将首次得到检验。将特别注意转移电子（Gunn效应）现象和超晶格带折叠效应之间的相互作用；这些知识将为新设备的实现提供思路。此外，这项研究不仅将有助于固体和微结构领域，而且蒙特卡罗技术是计算密集型的，因此新的算法将被开发出来，这将增强计算工程。该工程启动奖由计算工程和固态微结构项目联合支持。机构支持充足，私家侦探完全有能力进行研究。我强烈建议支持。

The design of new ultra-small semiconductor is being driven by the possibilities of atomic-scale control of fabrication. Fabrication at the Angstrom scale means that quantum mechanical effects will be important. One of the first results of advances in crystal growth techniques which allow atomic scale control of heterostructure device fabrication are superlattices. In order to characterize the device, electron transport coefficients must be obtained. Electron transport perpendicular to the lattice structure is important but difficult to calculate since the scale of the superlattice is of the same order of magnitude as the atomic lattice. This Engineering Initiation project will use the Monte Carlo simulation technique to investigate transport in superlattice devices. For the first time, high field effects will be examined. Particular attention will be paid to the interaction between transferred electron (Gunn effect) phenomena and superlattice band-folding effects; this knowledge will provide ideas for new device implementations. Furthermore, this research not only will contribute to the area of Solid-State and Microstructures but the Monte Carlo techniques are computationally intensive so that new algorithms will be developed which will enhance Computational Engineering. This Engineering Initiation Award is jointly supported by the Computational Engineering and Solid-State & Microstructures Programs. The institutional support is adequate and the P.I. is fully capable of carrying out the research. I strongly recommend support.