Physics of High-Mobility Materials and Interfaces

由于前一年的支持，在1)砷化镓异质结构中的持续光电流机制，2)在两个倒置界面(生长在铝砷化镓上的砷化镓)中识别主要的电子散射机制，3)量子霍尔效应的无耗散特性的应用，4)纳米级横向超晶格结构中的电子输运。强烈建议继续支持这笔正在从俄勒冈大学转移到佐治亚理工大学的赠款。

Significant advances resulting from the previous year's support have been made in 1) persistent photocurrent mechanisms in gallium arsenide heterostructures, 2) identifying dominant electron scattering mechanisms in two inverted interfaces (gallium arsenide grown on aluminum gallium arsenide), 3) application of the dissipationless nature of the quantum Hall effect, and 4) electron transport in nanometer-scale lateral superlattice structures. Continued support for this grant which is being transferred from the University of Oregon to Georgia Tech University is strongly recommended.