Light Scattering Studies of Semiconductor Heterostructure Interfaces

该研究使用不同的光散射技术， 表征半导体异质结构界面， 研究这些界面的物理性质。 拉曼 光学和声学声子的散射将用于 研究界面形态。 光散射 量子威尔斯中的电子将被用来研究基本的 界面的电子性质，即，的阵容 两种异质结构材料的能带。 的 实验工作的重点是了解和改善 外延生长程序，特别强调新的 系统如应变层超晶格和非晶多晶 通过等离子体增强气相沉积生长的层。

The research uses different light scattering techniques to characterize semiconductor heterostructure interfaces and to study the physical properties of these interfaces. Raman scattering by optical and acoustic phonons will be used to investigate the interface morphology. Light scattering by electrons in quantum wells will be used to study the fundamental electronic property of the interface, i.e., the lineup of the energy bands of the two heterostructure materials. The experimental effort focuses on understanding and improving epitaxial growth procedures, with special emphasis on novel systems such as strained layer superlattices and amorphous multi layers grown by plasma enhanced vapor deposition.