In Situ Studies of Tetrahedrally Bonded Thin Film Nucleation, Surfaces, and Interfaces

该研究计划的目的是获得一个 基本了解的结构和性质， 四面体配位的薄膜表面和界面， 它们与沉积的物理和化学的关系。 薄膜科学在这些方面的进展一直非常缓慢 由于用于沉积的等离子体工艺的复杂性 以及用于研究成核的原位探针的相对缺乏， 以及表面和界面的反应，特别是在不利条件下， 高压等离子体环境。 原位光谱 椭圆偏振法（SE）是一种单层灵敏、非微扰 这些技术将应用于这些问题。 一个独特 基于光学多通道分析仪的椭圆偏振测量系统就位 现在允许从1.1eV收集介电函数谱 至4.5 eV，最小时间分辨率小于1秒。 这允许在测量期间在每个埃处获取光谱。 这些电影的成长。 第二个工具也将是 根据这一提议。 要研究的材料是 氢化和无氢的无定形碳和硅作为 以及微晶钻石。 准备能力 将包括等离子体增强化学气相沉积（CVD）， 加热的灯丝增强CVD、远程等离子体CVD，全部来自CH4或 SiH4。 物理气相沉积技术包括蒸发， 有和没有离子辅助，直流平面磁控溅射，和 离子束溅射 研究将集中在 微晶金刚石的形核与界面结构 薄膜及其表面对良好的 其特征在于惰性和活性离子束。 类似的实验 将用于探测成核、表面反应性和 Si基薄膜的键合。 这些实验将用于 确定控制薄膜粘合的物理因素， 形态学

The aim of the proposed research program is to obtain a fundamental understanding of the structure and properties of tetrahedrally coordinated thin film surfaces and interfaces and their relationship to the physics and chemistry of deposition. Progress in these aspects of thin film science has been very slow owing to the complexity of the plasma processes for deposition and the relative lack of in situ probes for studying nucleation, and reactions at surfaces and interfaces, particularly in adverse high pressure plasma environments. In situ spectroscopic ellipsometry (SE) is a monolayer-sensitive, non-perturbative technique which will be applied to these problems. A unique optical multichannel analyzer-based ellipsometry system in place now permits collection of dielectric function spectra from 1.1 eV to 4.5 eV with a minimum time resolution of less than one second. This allows spectra to be taken at every Angstrom during the growth of these films. A second instrument will also be developed under this proposal. The materials to be studied are hydrogenated and hydrogen-free amorphous carbon and silicon as well as microcrystalline diamond. The preparation capabilities will include plasma enhanced chemical vapor deposition (CVD), heated filament enhanced CVD, remote plasma CVD, all from CH4 or SiH4. Physical vapor deposition techniques include evaporation, with and without ion assist, dc planar magnetron sputtering, and ion beam sputtering. The studies will concentrate on the nucleation and interface structure of microcrystalline diamond thin films and the response of their surfaces to well- characterized inert and reactive ion beams. Similar experiments will be used to probe the nucleation, surface reactivity, and bonding for the Si-based films. These experiments will be used to identify the physical factors which control film bonding and morphology.