Electronic Properties of Amorphous Semiconductors

计划中的研究大致分为两类。第一个将利用结电容和ESR光谱来研究各种非晶样品的缺陷特性。首先，他们将扩展他们最近非常成功的单异质结c-Si/a-Si:H结构的研究，以研究界面上的污染影响，以及晶体衬底上的a-Si，Ge:H合金层的异质结构。因此，他们希望确定界面缺陷结构和带偏移的趋势。他们将继续掺杂超晶格样品的工作，并开始异质结构多层膜的研究。他们还希望利用他们的技术表征大块a-Si，Ge:H合金薄膜的深层缺陷结构。第二个领域将是研究传输行为使用时间和空间调制的光电导率测量。他们希望通过一些相对较新的技术来更好地解决自由载流子动力学的色散和非色散成分。他们还希望将光电流相移分析方法与他们的其他实验技术结合起来，在相同的样品中，将Ef以上和以下的深度缺陷分布联系起来。这将为当前缺陷模型提供更关键的测试。

The planned research falls roughly into two categories. The first will utilize junction capacitance and ESR spectroscopy to study defect properties in various kinds of amorphous samples. First, they will extend their recent very successful studies of single heterojunction c-Si/a-Si:H structures to investigate contamination effects at the interface, and also to heterostructures of a-Si,Ge:H alloy layers on crystalline substrates. They thus hope to identify trends in the interface defect structure and in band offsets. They will continue their work with doping superlattice samples and also to initiate studies of heterostructure multilayer films. They also wish to characterize the deep defect structure of bulk a-Si,Ge:H alloy films using their techniques. The second area will be to study transport behavior using time and spatially modulated photoconductivity measurements. Through some relatively new techniques they hope to better resolve the dispersive vs. non- dispersive components of the free carrier dynamics. They also wish to apply the acphotocurrent phase shift analysis method in conjunction with their other experimental techniques to correlate, within the same samples, the deep defect distribution above and below Ef. This will provide a more critical test of the current defect models.