The Hydrodynamic Model for Semiconductor Devices: Theory and Computations

本研究以流体力学模型为基础，对半导体器件中电子和空穴的流动进行了理论和计算研究。对一维和二维半导体器件的亚音速和亚/超音速载流子流进行了数值模拟。对水动力激波进行了理论和计算分析。将论证流体动力学模型对模拟二维硅和砷化镓MESFET的物理意义。

This research is concerned with theoretical and computational investigations of the flow of electrons and holes in semiconductor devices based on the hydrodynamic model. Numerical simulations of both 1-d and 2-d semiconductor devices are proposed, for both subsonic and subsonic/supersonic flow of charge carriers. The hydrodynamic shock waves will be analyzed theoretically and computationally. The physical importance of the hydrodynamic model for simulating 2-d Si and GaAs MESFETs will be demonstrated.