Low-Temperature Processing of High Tc Superconducting Films:Process Optimization

等离子体辅助激光沉积（PLD）技术在400℃下制备了高Tc超导材料的高临界温度和高电流薄膜。这是任何原位法报道过的这些材料的最低工艺温度。PI将研究氧化学计量学及其与衬底温度的关系，以及在生长过程中从等离子体到薄膜的“有效”氧能量通量。接下来将仔细研究薄膜/衬底相互作用，包括扩散阻挡层的影响。研究了晶粒尺寸、机械应力和金属涂层封装对临界电流的影响。

The plasma-assisted laser deposition (PLD) technique has produced high critical temperature and current films of high Tc superconducting materials at 400C. This is the lowest process temperature ever reported for these materials for any in situ method. The PI will investigate the oxygen stoichiometry and its relationship to the substrate temperature and the "effective" oxygen energy flux from plasma to film during growth process. This will be followed by a careful study of the film/substrate interaction, including the effects of diffusion barrier layers. The effects of crystalline grain size, mechanical stress, and metallic-coating encapsulation on the critical current will be investigated.