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The Physics of Semiconductor Devices, Fifth International Workshop , December 10-15, 1989, New Delhi, India

The Physics of Semiconductor Devices, Fifth International Workshop , December 10-15, 1989, New Delhi, India
半导体器件物理,第五届国际研讨会,1989 年 12 月 10-15 日,印度新德里
批准号:
8912128
负责人:
Joseph Loferski
金额:
$3.54万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
1989
资助国家:
美国
项目状态:
已结题
起止时间:
1989-09-01 至 1990-08-31

项目摘要

项目成果

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中文摘要
翻译
该项目支持12名美国科学家参加将于1989年12月10日至15日在印度新德里举行的第五届半导体器件物理学国际研讨会。印度的组织者是新德里国防部固态物理实验室的退休主任S. C. Jain教授和马德拉斯印度理工学院的S. Radhakrishna博士。与前四次研讨会一样,会议/研讨会将涉及集成电路、超大规模集成电路、亚微米技术、MOS、双极器件、太阳能电池、高功率整流器、发光二极管和类似器件。它将讨论这些装置的设计、制造和使用方面的发展。预计将有西欧、美国、加拿大、澳大利亚、日本、苏联、东欧等60多名外国人士参加。以及来自南亚和东亚发展中国家的科学家。范围:在过去的四次会议中,PI担任了三次美国代表团的项目主管,而印度科学家Jain博士则担任了所有会议的主席。这些工作产生了会议记录,包括在会议上提出的重要文件。这次研讨会很可能是相当成功和富有成效的,会议记录应该会增加这一重要领域的科学文献。两国很可能在这一重要领域加强合作研究。
英文摘要
Description: This project supports participation by twelve U.S. scientists in the Fifth International Workshop on the Physics of Semiconductor Devices, to be held in New Delhi, India, December 10-15, 1989. The Indian organizers are Professor S. C. Jain, retired director of the Solid State Physics Laboratory in the Department of Defense, New Delhi, and Dr. S. Radhakrishna, of the Indian Institute of Technology, Madras. The conference/workshop, as was the case in the earlier four workshops, will deal with itegrated circuits, VLSI, submicron technology, MOS, bipolar devices, solar cells, high power rectifiers, light emitting diodes and similar devices. It will deal with developments in design, manufacture and use of such devices. It is expected that approximately 300 persons will attend including about 60 from foreign countries including Western Europe, the U.S. and Canada, Australia, Japan, the USSR and Eastern Europe, as well as scientists from developing countries in South and East Asia. Scope: The PI has been the project director for the U.S. delegations to three of the past four conferences, and the Indian scientists, Dr. Jain has been the chairman of all the conferences. These have resulted in proceedings covering the important papers presented at the meetings. This workshop is likely to be quite successful and productive, and the proceedings should add to the scientific literature in this important area. Increased cooperative research is very likely to result between the two countries in this important area.
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会议论文
Seventh International Workshop on Physics of Semiconductor Devices, New Delhi, India, December 14 to 18, 1993, Support of U.S. Participants
  • 批准号:
    9312242
  • 项目类别:
    Standard Grant
  • 资助金额:
    $0.0万
  • 财政年份:
    1993
  • 负责人:
    Joseph Loferski
  • 依托单位:
Industry-University Cooperative Research Center for Thin Film and Interface Research (CTFIR)
  • 批准号:
    8813548
  • 项目类别:
    Standard Grant
  • 资助金额:
    $28.3万
  • 财政年份:
    1989
  • 负责人:
    Joseph Loferski
  • 依托单位:
Planning Conference for an I/UCR Center for Thin Films and Interfaces
  • 批准号:
    8715920
  • 项目类别:
    Standard Grant
  • 资助金额:
    $1.2万
  • 财政年份:
    1987
  • 负责人:
    Joseph Loferski
  • 依托单位:
Fourth International Workshop on the Physics of Semiconductor Devices, Madras, India, December 10-15, 1987, Group Travel Award in Indian and U.S. Currencies
  • 批准号:
    8714933
  • 项目类别:
    Standard Grant
  • 资助金额:
    $3.55万
  • 财政年份:
    1987
  • 负责人:
    Joseph Loferski
  • 依托单位:
海外基金