Industry-University Cooperative Research Center for Thin Film and Interface Research (CTFIR)
薄膜与界面研究产学合作研究中心(CTFIR)
基本信息
- 批准号:8813548
- 负责人:
- 金额:$ 28.3万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:1989
- 资助国家:美国
- 起止时间:1989-02-01 至 1993-07-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
Thin films play an ever more important role in the U.S. electronics, automotive, jewelry and related industries whose competitiveness in the international area depends on developing new and better ways to produce coatings having the best characteristics for specific applications. This award establishes an Industry/University Cooperative Research Center for Thin Film and Interface Research (CTFIR) jointly between Brown University and the University of Rhode Island. Research at the CTFIR will aim at solving the scientific and technological problems which are impeding the development of such new thin films and coatings, and will focus on: characterization of films and interfaces; methods of deposition (especially high through-put methods such as sputtering) and growth of metal, semiconductor and insulator films; coatings for corrosion resistance in harsh environments; coatings for surgical implants; coatings for various electronic applications; thin film semiconductor devices like solar cells and transistors; films for passivating layers for semiconductor devices; films for optical coatings in high power laser and fiber optic applications; polymer films including Langmuir-Blodgett films and high temperature superconducting films produced by sputtering. The Industry Advisory Board for the Center has been established with 12 industry members, and the State of Rhode Island will provide $1M to equip a state-of-the-art diagnostics laboratory. This Center was coordinated with Dr. J. Larsen-Basse, Acting Program Director for Materials Engineering and Processing. The Program Manager recommends that Brown University be awarded $100,000 each year for five (5) years for the initiation of this joint Center between Brown University and the University of Rhode Island. As a Co-Center institution, the University of Rhode Island will receive a subcontract from Brown University for approximately half ($50,000) of the NSF annual support for the five year period. Near the end of each 12-month period, the Program Manager and/or Director of The Division of Cross-Disciplinary Research will review the progress of the Center on a number of renewal criteria, including the following: (1) extent to which university/industry interaction and collaboration is developing; (2) extent to which the support base for the center is expanding; (3) extent to which a robust research program is developing. If review is satisfactory, the Program Manager will recommend support of the next period of this continuing grant.
薄膜在美国电子、汽车、珠宝和相关行业中发挥着越来越重要的作用,这些行业在国际上的竞争力取决于开发新的、更好的方法来生产具有最佳应用特性的涂层。该奖项在布朗大学和罗德岛大学之间建立了薄膜和界面研究产学研合作研究中心(CTFIR)。CTFIR的研究将致力于解决阻碍这种新型薄膜和涂层发展的科学和技术问题,并将重点关注:薄膜和界面的表征;金属、半导体和绝缘体薄膜的沉积方法(特别是高通量方法,如溅射)和生长方法;在恶劣环境中耐腐蚀的涂层;外科植入物涂层;用于各种电子应用的涂料;薄膜半导体器件,如太阳能电池和晶体管;半导体器件钝化层用薄膜;用于高功率激光和光纤应用的光学涂层薄膜;聚合物薄膜,包括Langmuir-Blodgett薄膜和通过溅射生产的高温超导薄膜。该中心的行业咨询委员会已经成立,由12名行业成员组成,罗德岛州将提供100万美元,为最先进的诊断实验室提供设备。该中心由材料工程和加工代理项目主任J. Larsen-Basse博士协调。项目经理建议布朗大学在五(5)年内每年获得10万美元的奖励,以启动布朗大学和罗德岛大学之间的联合中心。作为一个合作中心机构,罗德岛大学将从布朗大学获得一份分包合同,在五年期间获得大约一半(50,000美元)的NSF年度支持。在每12个月结束时,项目经理和/或跨学科研究部主任将根据一系列更新标准审查中心的进展情况,包括以下方面:(1)大学/行业互动和合作的发展程度;(2)中心支撑基础扩大的程度;(3)一个强有力的研究项目正在发展的程度。如果审查是令人满意的,计划经理将建议支持这个持续拨款的下一个时期。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Joseph Loferski其他文献
Joseph Loferski的其他文献
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{{ truncateString('Joseph Loferski', 18)}}的其他基金
Seventh International Workshop on Physics of Semiconductor Devices, New Delhi, India, December 14 to 18, 1993, Support of U.S. Participants
第七届半导体器件物理国际研讨会,印度新德里,1993 年 12 月 14 日至 18 日,美国参与者的支持
- 批准号:
9312242 - 财政年份:1993
- 资助金额:
$ 28.3万 - 项目类别:
Standard Grant
The Physics of Semiconductor Devices, Fifth International Workshop , December 10-15, 1989, New Delhi, India
半导体器件物理,第五届国际研讨会,1989 年 12 月 10-15 日,印度新德里
- 批准号:
8912128 - 财政年份:1989
- 资助金额:
$ 28.3万 - 项目类别:
Standard Grant
Planning Conference for an I/UCR Center for Thin Films and Interfaces
I/UCR 薄膜和界面中心规划会议
- 批准号:
8715920 - 财政年份:1987
- 资助金额:
$ 28.3万 - 项目类别:
Standard Grant
Fourth International Workshop on the Physics of Semiconductor Devices, Madras, India, December 10-15, 1987, Group Travel Award in Indian and U.S. Currencies
第四届半导体器件物理国际研讨会,印度马德拉斯,1987 年 12 月 10 日至 15 日,印度和美国货币团体旅行奖
- 批准号:
8714933 - 财政年份:1987
- 资助金额:
$ 28.3万 - 项目类别:
Standard Grant
Short-Term Visit to Hsinchu, Taiwan to Discuss Cooperative Research on Photovoltaic Materials
短期访问台湾新竹洽谈光伏材料合作研究
- 批准号:
8417998 - 财政年份:1984
- 资助金额:
$ 28.3万 - 项目类别:
Standard Grant
SFC Travel Support (in Indian Currency) for U.S. Participation in the U.S. - India Exchange of Scientists Program
证监会为美国参加美国-印度科学家交流计划提供差旅支持(以印度货币计)
- 批准号:
8311650 - 财政年份:1983
- 资助金额:
$ 28.3万 - 项目类别:
Standard Grant
SFC Award (In Indian Currency and U.S. Dollars) for Group Travel to Second International Workshop on the Physics of Semiconductor Devices
因团体旅行参加第二届半导体器件物理国际研讨会而获得证监会奖(以印度货币和美元计算)
- 批准号:
8314069 - 财政年份:1983
- 资助金额:
$ 28.3万 - 项目类别:
Standard Grant
Sfc Travel Support (In Indian Currency) to Participate in The International Workshop on the Physics of Semiconductor Devices, Delhi, India, November 23-28, 1981
证监会出差支持(以印度货币)参加 1981 年 11 月 23 日至 28 日在印度德里举行的国际半导体器件物理研讨会
- 批准号:
8118999 - 财政年份:1981
- 资助金额:
$ 28.3万 - 项目类别:
Standard Grant
High Efficiency, Multi-Semiconductor Solar Cells Based on Alloy Ternaries
基于三元合金的高效多半导体太阳能电池
- 批准号:
8018584 - 财政年份:1981
- 资助金额:
$ 28.3万 - 项目类别:
Standard Grant
Copper Indium Sulfide and Other Related Photovoltaic Solar Cells
铜铟硫化物及其他相关光伏太阳能电池
- 批准号:
7723753 - 财政年份:1978
- 资助金额:
$ 28.3万 - 项目类别:
Standard Grant
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