Industry-University Cooperative Research Center for Thin Film and Interface Research (CTFIR)
薄膜与界面研究产学合作研究中心(CTFIR)
基本信息
- 批准号:8813548
- 负责人:
- 金额:$ 28.3万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:1989
- 资助国家:美国
- 起止时间:1989-02-01 至 1993-07-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
Thin films play an ever more important role in the U.S. electronics, automotive, jewelry and related industries whose competitiveness in the international area depends on developing new and better ways to produce coatings having the best characteristics for specific applications. This award establishes an Industry/University Cooperative Research Center for Thin Film and Interface Research (CTFIR) jointly between Brown University and the University of Rhode Island. Research at the CTFIR will aim at solving the scientific and technological problems which are impeding the development of such new thin films and coatings, and will focus on: characterization of films and interfaces; methods of deposition (especially high through-put methods such as sputtering) and growth of metal, semiconductor and insulator films; coatings for corrosion resistance in harsh environments; coatings for surgical implants; coatings for various electronic applications; thin film semiconductor devices like solar cells and transistors; films for passivating layers for semiconductor devices; films for optical coatings in high power laser and fiber optic applications; polymer films including Langmuir-Blodgett films and high temperature superconducting films produced by sputtering. The Industry Advisory Board for the Center has been established with 12 industry members, and the State of Rhode Island will provide $1M to equip a state-of-the-art diagnostics laboratory. This Center was coordinated with Dr. J. Larsen-Basse, Acting Program Director for Materials Engineering and Processing. The Program Manager recommends that Brown University be awarded $100,000 each year for five (5) years for the initiation of this joint Center between Brown University and the University of Rhode Island. As a Co-Center institution, the University of Rhode Island will receive a subcontract from Brown University for approximately half ($50,000) of the NSF annual support for the five year period. Near the end of each 12-month period, the Program Manager and/or Director of The Division of Cross-Disciplinary Research will review the progress of the Center on a number of renewal criteria, including the following: (1) extent to which university/industry interaction and collaboration is developing; (2) extent to which the support base for the center is expanding; (3) extent to which a robust research program is developing. If review is satisfactory, the Program Manager will recommend support of the next period of this continuing grant.
薄膜在美国扮演着越来越重要的角色。 电子、汽车、珠宝及相关行业, 国际竞争力取决于发展 新的和更好的方法来生产具有最好的 针对特定应用的特性。 该奖项确立了 产学合作薄膜研究中心 和布朗大学之间的接口研究(CTFIR) 和罗得岛大学。 CTFIR的研究将 旨在解决科学和技术问题, 阻碍了这种新型薄膜和涂层的发展, 将侧重于:薄膜和界面的表征;方法 沉积(特别是高通量方法, 溅射)和金属、半导体和绝缘体的生长 薄膜;在恶劣环境下的耐腐蚀涂层; 外科植入物涂层;各种电子产品涂层 应用;薄膜半导体器件,如太阳能电池和 晶体管.半导体钝化层用薄膜 器件.高功率激光器和光纤光学涂层用薄膜 光学应用.包括朗缪尔-布洛杰特的聚合物薄膜 薄膜和高温超导薄膜 溅射 该中心的行业咨询委员会已 成立了12个行业成员,和罗得岛州 Island将提供100万美元用于配备最先进的诊断设备 实验室 该中心与J. Larsen-Basse博士协调, 材料工程和加工项目总监。 项目经理建议布朗大学 每年奖励10万美元,为期五(5)年 布朗大学和大学的联合中心 来自罗得岛。 作为一个共同中心的机构,大学 罗得岛将获得布朗大学的奖学金, 大约一半(50,000美元)的NSF年度支持, 五年期。 在每12个月的期末,项目经理 和/或跨学科研究部主任 将审查该中心在一些更新的进展情况 标准,包括:(1)在多大程度上 大学与工业界的互动和合作正在发展; (2)中心的支持基础正在扩大的程度; (3)一个强大的研究计划正在发展的程度。 如果 如果评审结果令人满意,项目经理将建议提供支持 下一个持续资助期
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Joseph Loferski其他文献
Joseph Loferski的其他文献
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{{ truncateString('Joseph Loferski', 18)}}的其他基金
Seventh International Workshop on Physics of Semiconductor Devices, New Delhi, India, December 14 to 18, 1993, Support of U.S. Participants
第七届半导体器件物理国际研讨会,印度新德里,1993 年 12 月 14 日至 18 日,美国参与者的支持
- 批准号:
9312242 - 财政年份:1993
- 资助金额:
$ 28.3万 - 项目类别:
Standard Grant
The Physics of Semiconductor Devices, Fifth International Workshop , December 10-15, 1989, New Delhi, India
半导体器件物理,第五届国际研讨会,1989 年 12 月 10-15 日,印度新德里
- 批准号:
8912128 - 财政年份:1989
- 资助金额:
$ 28.3万 - 项目类别:
Standard Grant
Planning Conference for an I/UCR Center for Thin Films and Interfaces
I/UCR 薄膜和界面中心规划会议
- 批准号:
8715920 - 财政年份:1987
- 资助金额:
$ 28.3万 - 项目类别:
Standard Grant
Fourth International Workshop on the Physics of Semiconductor Devices, Madras, India, December 10-15, 1987, Group Travel Award in Indian and U.S. Currencies
第四届半导体器件物理国际研讨会,印度马德拉斯,1987 年 12 月 10 日至 15 日,印度和美国货币团体旅行奖
- 批准号:
8714933 - 财政年份:1987
- 资助金额:
$ 28.3万 - 项目类别:
Standard Grant
Short-Term Visit to Hsinchu, Taiwan to Discuss Cooperative Research on Photovoltaic Materials
短期访问台湾新竹洽谈光伏材料合作研究
- 批准号:
8417998 - 财政年份:1984
- 资助金额:
$ 28.3万 - 项目类别:
Standard Grant
SFC Travel Support (in Indian Currency) for U.S. Participation in the U.S. - India Exchange of Scientists Program
证监会为美国参加美国-印度科学家交流计划提供差旅支持(以印度货币计)
- 批准号:
8311650 - 财政年份:1983
- 资助金额:
$ 28.3万 - 项目类别:
Standard Grant
SFC Award (In Indian Currency and U.S. Dollars) for Group Travel to Second International Workshop on the Physics of Semiconductor Devices
因团体旅行参加第二届半导体器件物理国际研讨会而获得证监会奖(以印度货币和美元计算)
- 批准号:
8314069 - 财政年份:1983
- 资助金额:
$ 28.3万 - 项目类别:
Standard Grant
Sfc Travel Support (In Indian Currency) to Participate in The International Workshop on the Physics of Semiconductor Devices, Delhi, India, November 23-28, 1981
证监会出差支持(以印度货币)参加 1981 年 11 月 23 日至 28 日在印度德里举行的国际半导体器件物理研讨会
- 批准号:
8118999 - 财政年份:1981
- 资助金额:
$ 28.3万 - 项目类别:
Standard Grant
High Efficiency, Multi-Semiconductor Solar Cells Based on Alloy Ternaries
基于三元合金的高效多半导体太阳能电池
- 批准号:
8018584 - 财政年份:1981
- 资助金额:
$ 28.3万 - 项目类别:
Standard Grant
Copper Indium Sulfide and Other Related Photovoltaic Solar Cells
铜铟硫化物及其他相关光伏太阳能电池
- 批准号:
7723753 - 财政年份:1978
- 资助金额:
$ 28.3万 - 项目类别:
Standard Grant
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