课题基金 / 基金详情

Fourth International Workshop on the Physics of Semiconductor Devices, Madras, India, December 10-15, 1987, Group Travel Award in Indian and U.S. Currencies

Fourth International Workshop on the Physics of Semiconductor Devices, Madras, India, December 10-15, 1987, Group Travel Award in Indian and U.S. Currencies
第四届半导体器件物理国际研讨会,印度马德拉斯,1987 年 12 月 10 日至 15 日,印度和美国货币团体旅行奖
批准号:
8714933
负责人:
Joseph Loferski
金额:
$3.55万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
1987
资助国家:
美国
项目状态:
已结题
起止时间:
1987-08-01 至 1988-07-31

项目摘要

项目成果

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中文摘要
翻译
目标和相关性:该项目支持美国科学家参加将于1987年12月10日至15日在印度马德拉斯举行的第四届国际半导体器件物理研讨会。这次会议由COSTED、发展中国家科学技术委员会、联合国教科文组织、国际科学联盟理事会的一个委员会主办。过去的三次研讨会分别于1981年、1983年和1985年在印度举行。1987年会议将讨论以下领域:材料及其特性;微电子学、超大规模集成电路和超大规模集成电路器件;砷化镓器件;红外和辐射探测器和太阳能电池;以及对半导体器件的辐射效应。将介绍被邀请和投稿的论文,并将像前几次研讨会一样准备出版会议记录。该项目符合美国-印度项目支持美国参加会议的标准,这些会议加强了两国之间的信息交流,提高了合作研究的潜力。优点:这个研讨会的区域是工业发展最重要的区域之一,也是西方世界和印度快速发展的区域。P.I.非常有资格组织美国代表团,以最大限度地造福于与会者,并加强两国科学家在这一重要领域的互动。印度的组织者是该国顶尖的科学家之一。资金:不是别人,正是这个行动。
英文摘要
Objectives and Relevancy: This project supports participation by U.S. scientists in the Fourth International Workshop on the Physics of Semiconductor Devices, to be held December 10-15, 1987 in Madras, India. The meeting is sponsored by COSTED, the Committee on Science and Technology in Developing Countries, (UNESCO), a committee of the International Council of Scientific Unions. The past three workshops were held in India in 1981, 1983, 1985. The 1987 meeting is to address the following areas: materials and their characterization; microelectronics, VLSI and ULSI devices; gallium arsenide devices; infrared and radiation detectors and solar cells; and radiation effects on semiconductor devices. Invited and contributed papers will be presented, and proceedings will be prepared for publication as was done with the previous workshops. This project meets the U.S.-India program criteria for support of U.S. participation in meetings that enhance the exchange of information and improve the potential for cooperative research between the two countries. Merit: The area of this workshop is one of the most important for industrial development, and is also one where advances are taking place at a fast rate in the western world and also in India. The P.I. is eminently qualified to organize the U.S. delegation for maximum benefit to the participants and for enhancing the interaction between the scientists of the two countries in this important field. The Indian organizers are among that country's leading scientists. Funding: None other than this action.
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会议论文
Seventh International Workshop on Physics of Semiconductor Devices, New Delhi, India, December 14 to 18, 1993, Support of U.S. Participants
  • 批准号:
    9312242
  • 项目类别:
    Standard Grant
  • 资助金额:
    $0.0万
  • 财政年份:
    1993
  • 负责人:
    Joseph Loferski
  • 依托单位:
The Physics of Semiconductor Devices, Fifth International Workshop , December 10-15, 1989, New Delhi, India
  • 批准号:
    8912128
  • 项目类别:
    Standard Grant
  • 资助金额:
    $3.54万
  • 财政年份:
    1989
  • 负责人:
    Joseph Loferski
  • 依托单位:
Industry-University Cooperative Research Center for Thin Film and Interface Research (CTFIR)
  • 批准号:
    8813548
  • 项目类别:
    Standard Grant
  • 资助金额:
    $28.3万
  • 财政年份:
    1989
  • 负责人:
    Joseph Loferski
  • 依托单位:
Planning Conference for an I/UCR Center for Thin Films and Interfaces
  • 批准号:
    8715920
  • 项目类别:
    Standard Grant
  • 资助金额:
    $1.2万
  • 财政年份:
    1987
  • 负责人:
    Joseph Loferski
  • 依托单位:
海外基金