课题基金 / 基金详情

Fourth International Workshop on the Physics of Semiconductor Devices, Madras, India, December 10-15, 1987, Group Travel Award in Indian and U.S. Currencies

Fourth International Workshop on the Physics of Semiconductor Devices, Madras, India, December 10-15, 1987, Group Travel Award in Indian and U.S. Currencies
第四届半导体器件物理国际研讨会,印度马德拉斯,1987 年 12 月 10 日至 15 日,印度和美国货币团体旅行奖
批准号:
8714933
负责人:
Joseph Loferski
金额:
$3.55万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
1987
资助国家:
美国
项目状态:
已结题
起止时间:
1987-08-01 至 1988-07-31

项目摘要

项目成果

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中文摘要
翻译
目标和相关性:本项目支持参与, 美国科学家参加第四届国际物理研讨会 将于1987年12月10日至15日在马德拉斯举行, 印度 这次会议是由科学委员会COSTED主办的 联合国教科文组织(UNESCO),发展中国家的一个委员会, 国际科学联合会理事会。 过去三个工作坊 分别于1981年、1983年和1985年在印度举行。 1987年的会议是为了 解决以下领域:材料及其表征; 微电子、超大规模集成电路和超大规模集成电路器件;砷化镓器件; 红外和辐射探测器和太阳能电池;以及辐射 对半导体器件的影响。 邀请和提交的文件 将提交,会议记录将准备出版 就像以前的研讨会一样。 该项目符合 美国--印度计划支持美国参与的标准 加强信息交流和改进 两国合作研究的潜力。 优点:本研讨会的领域是最重要的, 工业发展,也是一个进步正在采取 在西方世界和印度都以很快的速度发展。 的 P.I.非常有资格组织美国代表团, 最大限度地造福于参与者和加强互动 两国科学家在这一重要领域的合作。 印度的组织者是该国顶尖的科学家。 答:不是别的,就是这个行动。
英文摘要
Objectives and Relevancy: This project supports participation by U.S. scientists in the Fourth International Workshop on the Physics of Semiconductor Devices, to be held December 10-15, 1987 in Madras, India. The meeting is sponsored by COSTED, the Committee on Science and Technology in Developing Countries, (UNESCO), a committee of the International Council of Scientific Unions. The past three workshops were held in India in 1981, 1983, 1985. The 1987 meeting is to address the following areas: materials and their characterization; microelectronics, VLSI and ULSI devices; gallium arsenide devices; infrared and radiation detectors and solar cells; and radiation effects on semiconductor devices. Invited and contributed papers will be presented, and proceedings will be prepared for publication as was done with the previous workshops. This project meets the U.S.-India program criteria for support of U.S. participation in meetings that enhance the exchange of information and improve the potential for cooperative research between the two countries. Merit: The area of this workshop is one of the most important for industrial development, and is also one where advances are taking place at a fast rate in the western world and also in India. The P.I. is eminently qualified to organize the U.S. delegation for maximum benefit to the participants and for enhancing the interaction between the scientists of the two countries in this important field. The Indian organizers are among that country's leading scientists. Funding: None other than this action.
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会议论文
Seventh International Workshop on Physics of Semiconductor Devices, New Delhi, India, December 14 to 18, 1993, Support of U.S. Participants
  • 批准号:
    9312242
  • 项目类别:
    Standard Grant
  • 资助金额:
    $0.0万
  • 财政年份:
    1993
  • 负责人:
    Joseph Loferski
  • 依托单位:
The Physics of Semiconductor Devices, Fifth International Workshop , December 10-15, 1989, New Delhi, India
  • 批准号:
    8912128
  • 项目类别:
    Standard Grant
  • 资助金额:
    $3.54万
  • 财政年份:
    1989
  • 负责人:
    Joseph Loferski
  • 依托单位:
Industry-University Cooperative Research Center for Thin Film and Interface Research (CTFIR)
  • 批准号:
    8813548
  • 项目类别:
    Standard Grant
  • 资助金额:
    $28.3万
  • 财政年份:
    1989
  • 负责人:
    Joseph Loferski
  • 依托单位:
Planning Conference for an I/UCR Center for Thin Films and Interfaces
  • 批准号:
    8715920
  • 项目类别:
    Standard Grant
  • 资助金额:
    $1.2万
  • 财政年份:
    1987
  • 负责人:
    Joseph Loferski
  • 依托单位:
海外基金