Fourth International Workshop on the Physics of Semiconductor Devices, Madras, India, December 10-15, 1987, Group Travel Award in Indian and U.S. Currencies

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Objectives and Relevancy: This project supports participation by U.S. scientists in the Fourth International Workshop on the Physics of Semiconductor Devices, to be held December 10-15, 1987 in Madras, India. The meeting is sponsored by COSTED, the Committee on Science and Technology in Developing Countries, (UNESCO), a committee of the International Council of Scientific Unions. The past three workshops were held in India in 1981, 1983, 1985. The 1987 meeting is to address the following areas: materials and their characterization; microelectronics, VLSI and ULSI devices; gallium arsenide devices; infrared and radiation detectors and solar cells; and radiation effects on semiconductor devices. Invited and contributed papers will be presented, and proceedings will be prepared for publication as was done with the previous workshops. This project meets the U.S.-India program criteria for support of U.S. participation in meetings that enhance the exchange of information and improve the potential for cooperative research between the two countries. Merit: The area of this workshop is one of the most important for industrial development, and is also one where advances are taking place at a fast rate in the western world and also in India. The P.I. is eminently qualified to organize the U.S. delegation for maximum benefit to the participants and for enhancing the interaction between the scientists of the two countries in this important field. The Indian organizers are among that country's leading scientists. Funding: None other than this action.