Parameter Extraction from High Frequency Heterojunction Bipolar Transistor Characteristics
Parameter Extraction from High Frequency Heterojunction Bipolar Transistor Characteristics
批准号:
9005837
负责人:
Sheila Prasad
金额:
$0.0万
依托单位:
依托单位国家:
美国
项目类别:
Continuing grant
财政年份:
1990
资助国家:
美国
项目状态:
已结题
起止时间:
1990-08-01 至 1993-01-31
中文摘要
本研究利用测量的GaAs和In (GaA1) As异质结晶体管的散射参数(发射器向上和发射器向下)来获得器件的优化模型。该建模方法基于模拟退火算法,避免了传统建模方法中遇到的局部极小值陷入问题。由此产生的模型有望引领提供卓越微波性能的器件。
英文摘要
This research uses the measured scattering parameters of GaAs and In (GaA1) As heterojunction transistors (emitter-up and emitter-down) to obtain an optimized model of the device. The method of modelling is based on the simulated annealing algorithm which avoids the problem of entrapment in local minima encountered in conventional methods of modelling. The resultant model is expected to lead devices that offer superior microwave performance.
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会议论文
Characterization of Linearity and Thermal Stability of HBT'sfor Optimum Performance
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批准号:9529643
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项目类别:Standard Grant
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资助金额:$0.0万
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财政年份:1996
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负责人:Sheila Prasad
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依托单位:
High Frequency/High Speed Characterization of Optoelectronic Integrated Circuits
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批准号:9412920
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项目类别:Standard Grant
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资助金额:$0.0万
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财政年份:1994
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负责人:Sheila Prasad
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依托单位:
Gain Resonances and Transit-Time Effects in High-Frequency Heterojunction Bipolar Transistors
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批准号:8818542
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项目类别:Standard Grant
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资助金额:$0.0万
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财政年份:1989
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负责人:Sheila Prasad
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依托单位:
海外基金