Industry Internship: Characterization of Process Parameters for Continuous Czochralski Growth of Silicon Single Crystals

研究领域是材料工程和制造工艺，旨在深入了解CZ晶体生长设备工艺中的基本物理现象，计算机辅助设计和制造自动化“一键控制”拉拔器中的主要科学和工程考虑，成本考虑，以及美国在CZ水晶拉杆机世界市场上的竞争力。本文将对硅单晶的连续充电Czochralski （CCZ）生长进行初步研究。CCZ工艺有望生产出性能均匀、质量更好、成本更低的晶体。CCZ工艺的研究将包括理论工作，以便对传统的CZ结晶器进行实验修改，并对熔体中的流动和温度场有基本的了解。实验将获得有关坩埚尺寸、熔体高度、功率要求、生长和进料速度、添加硅电荷的适当位置以及有助于开发商业装置的其他几个参数的数据。

Research is in the area of materials engineering and manufacturing processes aimed at acquiring in-depth knowledge of basic physical phenomena in Czochralski (CZ) crystal growth equipment processes, major scientific and engineering considerations in computer-aided design and manufacturing of an automated "one button control" puller, cost consideration, and United States competitiveness in world market for CZ crystal puller. Preliminary research will be performed on continuously-charged Czochralski (CCZ) growth of silicon single crystals. The CCZ process is expected to produce crystals of uniform properties, better quality and lesser costs. The research on CCZ process will include theoretical work in order to make modifications in the conventional CZ crystal puller for experiments, and develop a basic understanding of flow and temperature fields in the melt. Experiments to obtain data on crucible size, melt height, power requirement, growth and feed rates, appropriate location for addition of silicon charge and several other parameters which help in developing a commercial unit will be investigated.