In-situ Growth of Indium Arsenide/Antimonide Long Wavelength Photodiodes

介绍了InAsSb和In-AsSb应变超晶格（SSL）的新技术， 在硅（Si）上原位形成光电二极管具有以下潜力： 制造可生产的长波长红外（L-WIR）光电二极管 用于各种军事应用。 的调查研究 分子束外延（MBE）生长的SSL在Si上已经 在第一阶段SBIR计划中制造，旨在制造可生产的 长波红外阵列。 这是在第一阶段完成的：（1）所有要求的MBE 已经设计了与MBE系统兼容的修改， 有些已经减少到实践;（2）MBE工艺， 生长晶格匹配缓冲层，SSL和光电结已经 （3）发展高质量缓冲区的可行性， 硅衬底上的InAsSb外延层已经被大量的分子束外延所证实 增长运行;和（4）第二阶段的详细计划已经 确立了习 所执行的MBE增长运行始终 产生良好的外延生长，表现为良好的有序 反射高能电子衍射（RHEED）图案，高 生长稳定性、镜面形貌和高载流子浓度 迁移率 这些运行减少了高风险因素， 增加第二阶段成功的可能性。 第二阶段的第一个目标是优化缓冲区的增长 和InAsSb SSL以建立12微米的截止波长。 第二个目标是开发使用MBE的光电二极管检测器。 一 用于晶格匹配缺陷阻挡的Si上的特殊缓冲区将 然后在缓冲区上生长SSL，然后在 将建立光电二极管的原位生长。 低- 缺陷SSL将提供高探测器性能， 和均匀性，而顺序多层生长将产生 一种直接的原位光电二极管形成工艺。

The new technology of strained superlattice (SSL) of InAsSb and in- situ formation of photodiode on silicon (Si) has the potential of fabricating producible long-wavelength infrared (L-WIR) photodiodes for diverse and military applications. An investigation on the molecular beam epitaxial (MBE) growth of the SSL on Si has been made in a phase I SBIR program, aimed at fabricating producible LWIR arrays. This was accomplished in phase I: (1) all required MBE modifications compatible to the MBE system have been designed and some have been reduced to practice; (2) the MBE processes for growing a lattice-matching buffer, SSL and photojunction have been delineated; (3) the feasibility of growing high quality buffer and InAsSb epitaxial layers on Si has been demonstrated by numerous MBE growth runs; and (4) a detailed plan for phase II has been established. The MBE growth runs performed have consistently produced good epitaxial growth, manifested by well-ordered reflective high energy electron diffraction (RHEED) patterns, high growth stability, mirror-like surface morphology and high carrier mobility. These runs have reduced the high risk elements and increase the probability of success of phase II. The first goal in phase II is to optimize the growth of the buffer and InAsSb SSL to establish a cutoff wavelength of 12 microns. Second goal is to develop the photodiode detector using MBE. A special buffer on Si for lattice matching an defect blocking will be developed then the growth of SSL on the buffer, followed by the in-situ growth of the photodiodes will be established. The low- defect SSL will provide high detector performance, producibility and uniformity, while the sequential multilayer growth will produce a straightforward in-situ photodiode formation process.