Ultrafine Structures by Evaporation from Liquid Sources

利用激光蒸发液体靶材的双光束技术，在硅片上沉积了ITO薄膜。ITO非常适合用于高速电子设备，而硅由于具有高纯度、低成本、大面积晶圆而成为最佳衬底。我们将尝试理解激光蒸发的物理原理，这将有助于制造纳米级的空间结构。处理将作为功率密度的函数进行调查。沉积时的显微组织将被表征并与工艺变量相关联。激光的使用也提高了计算机或机器人控制在开发快速生长过程中在硅上沉积ITO的可能性。

A dual laser beam technique involving laser evaporation of a liquid target will be developed to deposit thin films of Indium Tin Oxide (ITO) on Silicon. ITO is excellent for use in high speed electronic devices, while silicon is an optimal substrate due to availability of high purity, low cost, large area wafers. Attempts will be made to understand the physics of laser evaporation that will facilitate the production of structures with a spatial order of nanometers. Processing will be investigated as a function of the power density. The as-deposited microstructures will be characterized and correlated to the process variables. The use of lasers also enhances the probability of either computer or robotic control in the development of a rapid growth process for depositing ITO on Si.