Conformal Heteroepitaxy of GaAs and InP on Silicon and Sapphire Substrates

共形气相外延(CVPE)是一种利用卤化物气相输运过程进行二维约束生长半导体薄膜的新技术。这项技术将应用于在硅和蓝宝石衬底上生长GaAs膜和InP膜。通过将生长限制在由覆盖在衬底上的氧化物掩模和相邻的悬垂掩模包围的薄空隙中，实现了具有高纵横比的外延-横向过度生长。这项技术在减少晶格失配和热应力的不利影响以获得低缺陷异质外延薄膜方面具有很好的潜力。我们将研究CVPE用于在硅上生长砷化镓、在蓝宝石上生长、在硅上生长InP和在蓝宝石上生长InP的可行性，重点是在实验上对硅上生长的砷化镓进行研究。将对异质外延材料进行表征，并对用异质外延薄膜制造的少数载流子器件，如光电探测器和LED进行评估。

Conformal Vapor Phase Epitaxy (CVPE) is a new technique for two-dimensional constrained growth of thin semiconductor films using a halide vapor transport process. This technique will be applied to the growth of GaAs and InP films on silicon and sapphire substrates. Epitaxial-lateral overgrowth with high aspect ratios is achieved by confining growth to a thin void space bounded by an oxide-mask coating the substrate and an adjacent overhanging mask. This technique has excellent potential for reducing the detrimental effects of lattice-mismatch and thermal stress to yield low-defect heteroepitaxial films. The feasibility of CVPE for GaAs-on-silicon, GaAs-on-sapphire, InP-on-silicon, and InP-on- sapphire will be studied with experimental emphasis on GaAs-on-silicon. Heteroepitaxial materials will be characterized and minority carrier devices, such as photodetectors and LEDs, fabricated with the heteroepitaxial films, will be evaluated.