A new defect-control approach for mismatched heteroepitaxy semiconductors

失配异质外延半导体的新缺陷控制方法

• 批准号: DP160103433
• 负责人: Prof Xiaojing Hao
• 金额: $ 18.92万
• 依托单位: The University of New South Wales
• 依托单位国家: 澳大利亚
• 项目类别: Discovery Projects
• 财政年份: 2016
• 资助国家: 澳大利亚
• 起止时间: 2016-01-05 至 2019-11-30
• 项目状态: 已结题
• 来源: https://dataportal.arc.gov.au/RGS/Web/Grants/DP160103433
• 关键词: new; defect; control; approach; mismatched

This project aims to develop a new defect-control approach for silicon-germanium heteroepitaxial semiconductor systems to provide a route for high-throughput, low-cost, high-efficiency silicon tandem solar cells. Mismatched heteroepitaxy of semiconductors is of considerable interest for fabricating novel devices. However, the use of highly-mismatched heteroepitaxial semiconductors has been limited due to the high densities of crystal defects which degrade the performance of both majority and minority carrier devices. This project aims to develop a new defect-control approach for heteroepitaxial semiconductors by continuous wavelength diode laser processing. With heteroepitaxial silicon-germanium as an example, the project will investigate the mechanism underlying defect-cleaning, optimised designs for best performance, and designs for high-efficiency tandem solar cells.

该项目旨在开发一种新的硅锗异质外延半导体系统缺陷控制方法，为高通量、低成本、高效率的硅叠层太阳能电池提供途径。半导体的失配异质外延对于制造新型器件具有很大的意义。然而，由于高密度的晶体缺陷会降低多数载流子和少数载流子器件的性能，高度失配的异质外延半导体的使用受到限制。该项目旨在通过连续波长二极管激光加工开发异质外延半导体的新缺陷控制方法。以异质外延硅锗为例，该项目将研究缺陷清除的机制、最佳性能的优化设计以及高效串联太阳能电池的设计。