A new defect-control approach for mismatched heteroepitaxy semiconductors

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This project aims to develop a new defect-control approach for silicon-germanium heteroepitaxial semiconductor systems to provide a route for high-throughput, low-cost, high-efficiency silicon tandem solar cells. Mismatched heteroepitaxy of semiconductors is of considerable interest for fabricating novel devices. However, the use of highly-mismatched heteroepitaxial semiconductors has been limited due to the high densities of crystal defects which degrade the performance of both majority and minority carrier devices. This project aims to develop a new defect-control approach for heteroepitaxial semiconductors by continuous wavelength diode laser processing. With heteroepitaxial silicon-germanium as an example, the project will investigate the mechanism underlying defect-cleaning, optimised designs for best performance, and designs for high-efficiency tandem solar cells.