A new defect-control approach for mismatched heteroepitaxy semiconductors

失配异质外延半导体的新缺陷控制方法

• 批准号: DP160103433
• 负责人: Prof Xiaojing Hao
• 金额: $ 18.92万
• 依托单位: The University of New South Wales
• 依托单位国家: 澳大利亚
• 项目类别: Discovery Projects
• 财政年份: 2016
• 资助国家: 澳大利亚
• 起止时间: 2016-01-05 至 2019-11-30
• 项目状态: 已结题
• 来源: https://dataportal.arc.gov.au/RGS/Web/Grants/DP160103433
• 关键词: new; defect; control; approach; mismatched

This project aims to develop a new defect-control approach for silicon-germanium heteroepitaxial semiconductor systems to provide a route for high-throughput, low-cost, high-efficiency silicon tandem solar cells. Mismatched heteroepitaxy of semiconductors is of considerable interest for fabricating novel devices. However, the use of highly-mismatched heteroepitaxial semiconductors has been limited due to the high densities of crystal defects which degrade the performance of both majority and minority carrier devices. This project aims to develop a new defect-control approach for heteroepitaxial semiconductors by continuous wavelength diode laser processing. With heteroepitaxial silicon-germanium as an example, the project will investigate the mechanism underlying defect-cleaning, optimised designs for best performance, and designs for high-efficiency tandem solar cells.

本项目旨在开发一种新的硅锗异质外延半导体系统的缺陷控制方法，为高通量、低成本、高效率的硅串联太阳能电池提供一条途径。半导体的失配异质外延在制备新型器件方面具有重要的意义。然而，由于高密度的晶体缺陷降低了大多数和少数载流子器件的性能，高度失配的异质外延半导体的使用受到了限制。本项目旨在开发一种利用连续波长半导体激光加工异质外延半导体的新的缺陷控制方法。以异质外延硅锗为例，该项目将研究缺陷清洁的潜在机制，优化设计以实现最佳性能，并设计高效率串联太阳能电池。