RIA: Experimental Study of Coulomb Blockade Devices

目的是表征采用被称为库仑封锁效应的单电子充电效应的器件，并研究将这种效应应用于新型器件开发的潜力。该研究的第一阶段将开发采用两种基本配置的半导体异质结构器件，并将表征器件中与库仑阻断效应相关的电导调制和电流-电压特性。实验结果将与预测趋势进行比较，以验证预测并评估更先进结构建议的可行性。研究的第二阶段将研究基于这种效应的先进设备。基于几种建议配置的设备将被开发和评估。这种类型的晶体管有望提供比传统器件更好的增益和速度特性，并且有望在比介观结构所需的更合理的温度和电压水平下工作。

The objectives are to characterize devices employing a single-electron charging effect known as the Coulomb blockade effect and to investigate the potential for applying this effect to the development of novel devices. The first phase of the proposed study will develop devices on semiconductor heterostructures employing two basic configurations and will characterize the conductance modulation and current-voltage characteristics associated with Coulomb blockade effects in the device. The experimental results will be compared with predicted trends in order to validate the predictions and to evaluate the feasibility of proposals for more advanced structures. The second phase of the study will investigate advanced devices based on this effect. Devices based on several proposed configurations will be developed and evaluated. Proposed transistors of this type are expected to offer better gain and speed characteristics than conventional devices and are expected to operate at more reasonable temperatures and voltage levels than those required for mesoscopic structures.