High Order Crystal Plane Selectivity in Silicon Anisotropic Wet Etching

该基金支持研究以获得对硅各向异性蚀刻中化学成分对高阶平面选择性的影响的详细了解。选择直径为0.25英寸的抛光单晶硅球进行研究，因为它提供了一个系统的工具来测量各种蚀刻中的平面选择性。两个关键问题将被解决：阳离子在水溶液中的作用，以及酒精和其他添加剂对蚀刻各向异性的作用。三维微机械结构的可视化将有助于复杂微结构的设计。

This grant supports research to gain a detailed understanding of the influence of chemical composition on the higher order plane selectivity in silicon anisotropic etching. A polished single crystal silicon sphere, 0.25 inches in diameter is chosen for the study because it provides a systematic tool to measure the plane selectivity in the various etches. Two critical questions will be addressed: the role of the cation in aqueous solutions, and the role of alcohol and other additives to the anisotropy of the etching. The visualization of three dimensional micromachined structures will assist in the design of complex microstructures.