Crystal Growth of nonpolar a-plane GaN on r-plane sapphire substrate and the application to high efficiency green light emitting diodes

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The experimental crystal growth of a-plane GaN on r-plane sapphire substrate was carried out. Through this experiment, we have developed novel technology to grow semi-polar {11-22} plane GaN on the r-plane patterned sapphire substrate (r-PSS) with high quality and large diameter by metal-organic vapor phase epitaxy (MOVPE). We only use the basic and standard growth technology of c-plane GaN on the c-plane sapphire. Dislocation density of the {11-22} GaN is approximately 1×10^8cm(-2). The LED structure was fabricated on the {11-22} GaN template on the r-PSS. The blue-shift of the emission peak wavelength of the {11-22} LED as the increasing in injection current from 20mA to 100mA is smaller than that of c-plane LED.