A Non-Invasive Sensor Technique for Process Control in Plasma Processing Reactors
A Non-Invasive Sensor Technique for Process Control in Plasma Processing Reactors
批准号:
9161456
负责人:
M. Meyyappan
金额:
$4.99万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
1992
资助国家:
美国
项目状态:
已结题
起止时间:
1992-01-01 至 1992-09-30
中文摘要
这项研究活动旨在开发一种非侵入性的等离子体反应堆监测技术。这种方法的基础是激光诱导荧光(LIF)现象,它可以用来进行等离子体性质的三维映射。将对此进行分析,以提供关于组成物种、物种和污染物出现或消失的检测以及终点检测的定量信息。这项技术还将开发创新的方法,以执行高精度和高灵敏度的快速扫描。该技术可用于提供可靠的监控,以实现对干等离子体过程的过程控制。干法等离子体工艺被广泛应用于半导体器件的制造。实施闭环控制的能力将对该过程的产量和效率产生重大影响,对一个重要的行业部门具有巨大的好处。
英文摘要
This research activity is designed to develop a non-invasive technique for the monitoring of plasma reactors. The basis for this approach is the phenomenon of Laser Induced Fluorescence (LIF) which can be used to conduct three-dimensional mapping of the plasma properties. This will be analyzed to provide quantitative information on constituent species, detection of appearance or disappearance of species and contaminants, and end point detection. The technique will also develop innovative methods to perform rapid scanning with a high degree of accuracy and sensitivity. The technique can be used to provide reliable monitoring to enable process control of the dry plasma process. The dry plasma process is widely used for the manufacturing of semi-conductor devices. The ability to implement closed loop control will have significant impact on the yield and efficiency of the process with large benefits to a vital industry segment.
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会议论文
Process Control, Diagnostics, and Modeling in Semiconductor Manufacturing I (Symposium to be held in Reno, NE, May 2l-26, l995)
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批准号:9521742
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项目类别:Standard Grant
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资助金额:$0.4万
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财政年份:1995
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负责人:M. Meyyappan
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依托单位:
A Noninvasive Temperature Sensor for Plasma Processing of Semiconductors
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批准号:9260650
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项目类别:Standard Grant
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资助金额:$5.0万
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财政年份:1993
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负责人:M. Meyyappan
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依托单位:
Ultra Fast Time Resolved Spectrofluorometer
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批准号:9260066
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项目类别:Standard Grant
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资助金额:$4.95万
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财政年份:1993
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负责人:M. Meyyappan
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依托单位:
海外基金